Semiconductor Memory Device Multiplexer Layout

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Solution Overview

Problem

Current semiconductor memory devices face challenges in size reduction due to the inefficient placement and connectivity of multiplexers, which leads to increased size and dead spaces in the memory cell array layout.

Innovation Solution

The semiconductor memory device employs a configuration with multiple multiplexers strategically placed in different regions, including a first multiplexer extending in the second direction and a second multiplexer extending in the first direction, connected by specific wirings to optimize the layout and reduce the overall size by effectively utilizing the available space.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If multiplexers are placed in conventional positions within the memory cell array, then connectivity is maintained, but device size increases and dead spaces are created

Engineering Contradiction:
Improvememory device sizeVSAvoidmultiplexer placement complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent moves multiplexers from the traditional planar placement within the memory cell array to a three-dimensional configuration where multiplexers are positioned at the periphery and connected via vertical connection wirings. This dimensional transition eliminates dead spaces within the memory cell array while maintaining all necessary connectivity functions.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent extracts multiplexers from the interior of the memory cell array and relocates them to peripheral regions. This extraction removes the multiplexers from the active memory area, eliminating the dead spaces they previously occupied while preserving their switching and multiplexing functions through dedicated connection wirings.

Inventive Principle:
Principle #2Taking out (Extraction)

2Area of stationary object

If multiplexers are relocated to reduce dead spaces, then area utilization improves, but wiring complexity increases

Engineering Contradiction:
Improvearea utilizationVSAvoidwiring configuration
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent merges the functions of multiple connection wirings into shared vertical pathways that connect multiplexers to memory cell arrays. By consolidating connection routes and using common vertical interconnect structures, the wiring complexity is reduced despite the relocated multiplexer positions.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent introduces vertical connection wirings that extend in the third dimension (depth) to connect peripheral multiplexers to memory cell arrays. This three-dimensional wiring approach consolidates connection pathways and reduces the overall wiring complexity compared to planar routing methods.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Area of stationary object

If connection wirings extend vertically to connect multiplexers, then space efficiency improves, but voltage loss increases

Engineering Contradiction:
Improvespace efficiencyVSAvoidvoltage loss
Core Design Contradiction:
Area of stationary objectVSLoss of energy

Solution Approach 1:

The patent applies different material properties or structural characteristics to specific regions of the vertical connection wirings. By optimizing the local quality of wiring materials, cross-section areas, or insulation properties in critical voltage transmission zones, the patent reduces voltage loss while maintaining the space-efficient vertical connection architecture.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10803936B2Semiconductor memory device
Publication Date: 2020.10.13 KIOXIA CORP
  • US10803936B2 patent drawing
  • US10803936B2 patent drawing
  • US10803936B2 patent drawing

AI summary

A semiconductor memory device includes first wirings above a substrate and extending in a first direction, second wirings above the first wirings and extending in a second direction crossing the first direction, third wirings above the second wirings and extending in the first direction, memory cells between the first and second wirings and between the second and third wirings, a first multiplexer that extends in the second direction, is connected to the first wirings, and is provided in a first region which overlaps with the first, second, and third wirings in a third direction that crosses the first and second directions, and a second multiplexer that extends in the first direction, is connected to the second wirings, and is provided in a second region which overlaps with the first, second, and third wirings in the third direction.