Memory Device Noise-Suppressing Resistors Signal Reflection
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Solution Overview
Problem
Current memory devices face challenges in increasing data transmission speed, leading to difficulties in handling larger data amounts efficiently due to signal reflection and resonance issues among memory integrated circuits.
Innovation Solution
A memory device design incorporating a driver integrated circuit, a voltage-dividing resistor, and noise-suppressing resistors to reduce signal reflection and resonance, allowing multiple memory integrated circuits to operate effectively and access increased data volumes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If data transmission speed is increased, then data access capability is improved, but signal reflection and resonance issues occur among memory integrated circuits
Solution Approach 1:
The patent introduces noise-suppressing resistors as intermediary components between memory ICs and the connection path, and a voltage-dividing resistor as a mediator to provide stable reference voltage. These intermediary elements isolate and dampen signal reflections and resonance, allowing high-speed data transmission without compromising signal stability.
Solution Approach 2:
The patent changes the electrical parameters of the connection path by introducing resistors with specific resistance values. The noise-suppressing resistors are configured with resistance values that optimize the balance between signal transmission speed and reflection suppression, while the voltage-dividing resistor provides a stable reference voltage level, thereby resolving the contradiction between speed and reliability.
2Productivity
If multiple memory integrated circuits are connected to increase data access capability, then data transmission capacity is improved, but signal reflection and resonance among memory ICs worsen
Solution Approach 1:
The patent places noise-suppressing resistors as intermediary components between each memory IC and the connection path. These resistors act as isolation elements that prevent signal reflections and resonance from propagating between multiple memory ICs, enabling safe expansion of data access capability without compounding interference issues.
Solution Approach 2:
The patent segments the connection path by introducing individual noise-suppressing resistors for each memory IC. This segmentation isolates each memory IC's electrical characteristics, preventing mutual interference while maintaining the ability to access multiple memory devices simultaneously, thus resolving the contradiction between productivity and harmful factors.
3Reliability
If noise-suppressing resistors are added to reduce signal reflection, then signal stability is improved, but device complexity increases
Solution Approach 1:
The patent applies noise-suppressing resistors locally at specific critical points in the circuit - between each memory IC and the connection path, and a voltage-dividing resistor at the reference voltage terminal. This localized application provides maximum signal stability improvement with minimal addition to overall device complexity, as the resistors are integrated into existing connection points rather than requiring separate circuit boards or complex additional structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enhances data transmission speed by minimizing signal reflection and resonance, enabling normal operation of memory devices even on circuit boards with complex wiring configurations, thus supporting higher data access capabilities.
Implementation Method 1
One terminal of the voltage-dividing resistor is electrically coupled to a voltage source and another terminal of the voltage-dividing resistor is electrically coupled to the driver IC
Implementation Method 2
each of the at least two of the other memory ICs is electrically coupled to the connection path through one of the noise-suppressing resistors
Data Source
AI summary
A memory device that includes a driver IC, a voltage-dividing resistor, at least two noise-suppressing resistors and at least three memory ICs is provided. A terminal of the voltage-dividing resistor is electrically coupled to a voltage source and another other terminal of the voltage-dividing resistor is electrically coupled to the driver IC through an end a connection path. One of the memory ICs is electrically coupled to the voltage-dividing resistor and the driver IC through the end the connection path. Each of at least two of the other memory ICs is electrically coupled to the connection path through one of the noise-suppressing resistors and is further electrically coupled to the driver IC.