Memory Device Offset Calibration for Signal Integrity

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Solution Overview

Problem

High-speed communication between a controller and a memory device, such as DRAM or SRAM, often results in deteriorated signal integrity due to inter-symbol interference (ISI), which affects data transmission quality.

Innovation Solution

A memory device with an on-die termination (ODT) circuit and offset calibration circuit that selectively applies different voltages to receivers to perform offset calibration and feedback, improving signal integrity by compensating for voltage differences and correcting errors in data transmission.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If high-speed communication is implemented between controller and memory device, then communication speed increases, but signal integrity deteriorates due to inter-symbol interference

Engineering Contradiction:
Improvecommunication speedVSAvoidsignal integrity
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent changes voltage parameters by selectively applying different voltages (first voltage and second voltage) to the second input terminals of receivers during offset calibration operations. This voltage parameter adjustment enables the reception interface to compensate for signal degradation and maintain signal integrity at high communication speeds.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent performs offset calibration operations in advance before normal data transmission. By预先 applying different voltages to receivers and calculating offset values beforehand, the system prepares the reception interface to handle high-speed signals with degraded integrity, thereby improving overall communication reliability.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If offset calibration operation is performed to improve signal integrity, then data transmission quality improves, but additional voltage control circuits and operations are required

Engineering Contradiction:
Improvedata transmission qualityVSAvoidvoltage control circuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent makes the first and second switches multi-functional by using them for both voltage selection during offset calibration and normal operation. This universal use of switches reduces the need for dedicated calibration-only circuitry, thereby limiting the increase in device complexity while still achieving improved data transmission quality.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250006233A1Memory device performing offset calibration and operating method thereof
Publication Date: 2025.01.02 SAMSUNG ELECTRONICS CO LTD
  • US20250006233A1 patent drawing
  • US20250006233A1 patent drawing
  • US20250006233A1 patent drawing

AI summary

Disclosed are a memory device that performs offset calibration and a method of operating the memory device. The memory device includes an input/output pad configured to receive data from a device external, an on-die termination (ODT) circuit connected to the input/output pad, a plurality of receivers connected to the ODT circuit and configured to receive the data from the input/output pad, an offset calibration circuit configured to perform an offset calibration operation on data output from the plurality of receivers and output an offset correction, a first switch configured to provide a first voltage to the plurality of receivers, and a second switch configured to provide a second voltage to the plurality of receivers. During the offset calibration operation, the plurality of receivers receive a third voltage in response to the ODT circuit being enabled and the first voltage through the first switch.