Memory Output Circuit Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
In semiconductor memory technologies, a larger parasitic capacitance forms between control lines connected to compensation circuits and pull-up or pull-down circuits, which hinders the optimization of signal timing sequences.
Innovation Solution
The semiconductor device is designed with non-overlapping integration regions for pull-up, pull-down, and compensation circuits, with the compensation circuit positioned in a centralized region to reduce parasitic capacitance and enhance signal drive capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the compensation circuit is integrated in the same region as the pull-up and pull-down circuits, then the device complexity is reduced, but a larger parasitic capacitance is formed between control lines and circuits
Solution Approach 1:
The semiconductor device divides the circuit into separate integration regions: a first integration region for the pull-up circuit, a second integration region for the pull-down circuit, and a third integration region for the compensation circuit. This spatial segmentation reduces parasitic capacitance between control lines and circuits while maintaining functional integration through standardized interconnection structures.
2Power
If the compensation circuit is positioned close to pull-up/pull-down circuits, then the drive capability enhancement is more effective, but signal timing optimization is hindered due to larger parasitic capacitance
Solution Approach 1:
The patent positions the compensation circuit in a separate integration region (third integration region) that is spatially distinct from the pull-up and pull-down circuit regions. This dimensional separation in the layout reduces parasitic capacitance effects on signal timing while the compensation circuit maintains its drive capability enhancement function through dedicated control lines and appropriate sizing of compensation transistors.
Data Source
AI summary
Embodiments relate to the field of semiconductor technology, and proposes a semiconductor device and a memory. The semiconductor device includes a pull-up circuit integration region, a pull-down circuit integration region and a compensation circuit integration region not overlapped with one another. The semiconductor device further includes an output circuit, and the output circuit includes: a pull-up circuit, a pull-down circuit, and a compensation circuit. The pull-up circuit is connected to a signal output line, and the pull-up circuit is positioned in the pull-up circuit integration region. The pull-down circuit is connected to the signal output line, and the pull-down circuit is positioned in the pull-down circuit integration region. The compensation circuit is configured to enhance a drive capability of an output signal from the signal output line, and the compensation circuit is positioned in the compensation circuit integration region.