Nonvolatile Memory Overwrite ECC for Data Integrity
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Solution Overview
Problem
Current nonvolatile memory devices lack effective error detection and correction mechanisms for reliable data overwrite operations, which can lead to uncorrectable errors and reduced data integrity.
Innovation Solution
Implementing error detection and correction techniques, such as using Hamming codes or parity bits, in overwritable nonvolatile memory devices to combine read and overwrite data, detect errors, and generate new error correction codes for reliable data storage and overwrite operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If error detection and correction techniques are implemented in overwritable nonvolatile memory devices, then data reliability and integrity are improved, but device complexity increases
Solution Approach 1:
The patent applies preliminary action by reading the existing data from the selected cell region before performing the overwrite operation. This pre-read step allows the system to obtain the original data that will be overwritten, which is then combined with the new input data to generate updated error correction codes. This preliminary reading action enables the error correction mechanism to function effectively without requiring complex real-time error detection during the overwrite process itself.
Solution Approach 2:
The patent uses an intermediary approach by combining the read data (original data) with the input data (new data) to generate updated error correction codes. Instead of directly overwriting the data and losing the original error correction information, the system uses both the read data and input data as intermediaries to create new ECC values. This intermediary combination step preserves error detection and correction capabilities while allowing the overwrite operation to proceed.
2Reliability
If error detection and correction techniques are implemented in overwritable nonvolatile memory devices, then data integrity is improved, but processing time increases
Solution Approach 1:
The patent performs the read operation as a preliminary action before the overwrite operation. By reading the existing data first, the system prepares the necessary information for generating updated error correction codes. This preliminary action allows the error correction process to be integrated into the overwrite operation flow rather than being performed as a separate post-processing step, thereby minimizing additional processing time.
Solution Approach 2:
The patent merges the error correction code generation process with the overwrite operation itself. Instead of performing error detection and correction as separate operations before and after writing, the system combines these functions by generating updated ECC values during the overwrite process using both the read data and input data. This merging of operations reduces the total processing time while maintaining data integrity.
Data Source
AI summary
A nonvolatile memory device comprises overwritable memory cells. In an overwrite operation, data is read from a selected region of the nonvolatile memory device and combined with overwrite data to produce combined data. An error correction code is then generated for the combined data and the overwrite data and the error correction code are stored in the selected region.