Nonvolatile Memory Oxygen Barrier Layer
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Solution Overview
Problem
Existing nonvolatile semiconductor memory apparatuses face challenges in achieving higher density and miniaturization due to oxygen diffusion, which damages semiconductor electrode wires and interlayer insulating layers during thermal treatment, especially when using ferroelectric substances or resistance variable layers.
Innovation Solution
A nonvolatile semiconductor memory apparatus configuration that includes an oxygen barrier layer between the wire forming region and the memory portion forming region, preventing oxygen diffusion and using materials like silicon nitride or alumina for the oxygen barrier layer to ensure stability and compatibility with conventional semiconductor processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermal treatment is performed in an oxygen atmosphere to improve hysteresis characteristic of ferroelectric substance, then the hysteresis characteristic is improved, but metal wires in the wire forming region are oxidized by oxygen diffusing through the interlayer insulating layer
Solution Approach 1:
An oxygen barrier layer is introduced as an intermediary between the wire forming region and the memory portion forming region. This barrier layer prevents oxygen from the thermal treatment atmosphere from reaching and oxidizing the metal wires, while still allowing the thermal treatment to proceed for improving the hysteresis characteristic of the ferroelectric substance.
Solution Approach 2:
The structure is segmented into distinct regions: a wire forming region containing metal wires, an oxygen barrier layer, and a memory portion forming region containing the ferroelectric substance. This segmentation isolates the metal wires from oxygen exposure during thermal treatment, enabling independent optimization of each region's properties.
2Object-affected harmful factors
If anti-oxidation film is formed after metal wire to prevent oxidation, then oxidation is prevented, but the anti-oxidation film has structure separated by through-conductors and is relatively difficult to provide sufficient oxygen blocking property
Solution Approach 1:
The oxygen barrier layer serves as a continuous intermediary layer that spans across the entire memory portion forming region, providing uninterrupted oxygen blocking. Unlike the anti-oxidation film that is segmented by through-conductors, this barrier layer maintains continuity and sufficient oxygen blocking property.
3Productivity
If miniaturization and higher density are achieved, then capacity is increased, but oxygen diffusion damage becomes more severe due to reduced structural margins
Solution Approach 1:
The introduction of the oxygen barrier layer creates a clear separation between the wire forming region and memory portion forming region. This segmentation allows for continued miniaturization and increased density while maintaining adequate protection against oxygen diffusion, as the barrier layer provides a dedicated protection zone that is not compromised by reduced structural margins.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents damage to semiconductor electrode wires and interlayer insulating layers, enabling higher density, miniaturization, and stable operation of the memory apparatus with reduced parasitic capacitance and improved manufacturing yield.
Implementation Method 1
an oxygen barrier layer which is interposed between the memory portion forming region and the wire forming region and extends continuously over an entire of the memory portion forming region to block oxygen
Data Source
AI summary
A nonvolatile semiconductor memory apparatus (10) of the present invention comprises a semiconductor substrate (11), an active element forming region provided on the semiconductor substrate (11) and including a plurality of active elements (12), a wire forming region which is provided on the active element forming region to electrically connect the active elements (12) and includes plural layers of semiconductor electrode wires (15, 16), a memory portion forming region (100) which is provided above the wire forming region and provided with memory portions (26) arranged in matrix, a resistance value of each of the memory portions changing according to electric pulses applied, and an oxygen barrier layer (17) which is provided between the memory portion forming region (100) and the wire forming region so as to extend continuously over at least an entire of the memory portion forming region (100).