3D Memory Package Hybrid Bonding for Shorter Signal Routing

The patent transitions from planar bonding to three-dimensional stacked architecture, placing memory dies directly above logic dies in vertical alignment. This dimensional change enables electrical signals to travel perpendicularly through TSVs rather than laterally across the die surface, dramatically reducing routing distance and latency while maintaining bonding reliability.

The patent implements nested structures where TSVs are formed within memory dies, interconnect structures are embedded within dielectric layers, and multiple dies are stacked within a single package. This nesting enables compact integration and shortens electrical paths by routing signals through vertically nested conductive pathways rather than extended lateral connections.

The patent divides the memory system into modular stacked dies, each containing standardized TSVs and interconnect structures. This segmentation allows identical or similar memory dies to be stacked in sequence, simplifying the bonding process through repeatability while increasing capacity through quantity of stacked layers rather than complexity of individual structures.

The patent employs universal TSV structures and standardized interconnect designs that serve multiple functions across different die layers. The same TSV formation process and bonding techniques are applied uniformly to stack multiple memory dies, reducing overall system complexity despite increased memory capacity achieved through additional stacked layers.