Semiconductor Memory Page Buffer Blocks With Shared Decoders

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Solution Overview

Problem

Current semiconductor memory devices face challenges in reducing size while maintaining effective page buffer circuit functionality, particularly in the arrangement and electrical connections of page buffer blocks.

Innovation Solution

The semiconductor device incorporates unit page buffer blocks with four page buffer pairs arranged in a column direction, each comprising a common column decoder block and both upper and lower page buffer stages, which are electrically connected. These stages include selection, latch, and cache blocks arranged in specific configurations to optimize electrical connections and functionality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If page buffer blocks are arranged with multiple page buffer pairs, then data processing capability is improved, but device area increases

Engineering Contradiction:
Improvedata processing capabilityVSAvoiddevice area
Core Design Contradiction:
ProductivityVSArea of stationary object

Solution Approach 1:

Multiple page buffer pairs (first and second page buffer pairs) share common column decoder blocks and bit line sets, merging functional resources to reduce overall device area while maintaining enhanced data processing capability through parallel buffer operations

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The common column decoder blocks serve multiple page buffer pairs simultaneously, and bit line sets are shared across different buffer pairs, enabling single resources to perform multiple functions and support increased productivity without proportional area increase

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Area of stationary object

If page buffer pairs are arranged in column direction with shared resources, then device area is reduced, but electrical connection complexity increases

Engineering Contradiction:
Improvedevice areaVSAvoidelectrical connection complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The page buffer circuit is divided into distinct upper and lower page buffer stages, each with dedicated selection, latch, and cache blocks, segmenting the electrical connections into manageable sections that reduce overall complexity despite multiple shared resources

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Page buffer pairs are arranged in a two-dimensional layout with upper and lower stages connected to common column decoders, utilizing spatial dimensionality to organize electrical connections systematically rather than linearly, reducing connection complexity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11960408B2Semiconductor memory device including unit page buffer blocks having four page buffer pairs
Publication Date: 2024.04.16 SK HYNIX INC
  • US11960408B2 patent drawing
  • US11960408B2 patent drawing
  • US11960408B2 patent drawing

AI summary

A unit page buffer block includes first to fourth page buffer pairs. Each of the page buffer pairs includes a common column decoder block; and an upper page buffer stage and a lower page buffer stage electrically and commonly connected to the common column decoder block. Each of the upper page buffer stages includes an upper selection block; an upper latch block; and an upper cache block. Each of the lower page buffer stage includes a lower selection block; a lower latch block; and a lower cache block. Each of the upper selection blocks includes first to fourth sub-selection blocks. Each of the upper and lower latch blocks includes first to twelfth upper sub-latch blocks. Each of the upper and lower cache blocks includes first to twelfth upper sub-cache blocks. Each of the common column decoder block includes first to third sub-common column decoder blocks arranged in a row direction.