Semiconductor Memory Page Buffer Temperature Compensation
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Solution Overview
Problem
Semiconductor memory devices face challenges in maintaining accurate read operations across varying temperatures, as the precharge potential levels at sensing nodes need to be adjusted to ensure stable sensing margins, especially when cell currents change with temperature.
Innovation Solution
The semiconductor memory device includes a control logic that detects temperature and adjusts the precharge potential level at the sensing node of page buffers through a kick signal, ensuring accurate data sensing by increasing or decreasing the precharge potential based on temperature conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the precharge potential level at the sensing node is kept constant, then the circuit design is simple, but the sensing accuracy deteriorates when temperature varies
Solution Approach 1:
The precharge potential level at the sensing node is made dynamically adjustable based on temperature conditions. The control logic modifies the precharge potential level in response to detected temperature changes, allowing the circuit to adapt to varying thermal environments and maintain accurate sensing without requiring overly complex circuitry
Solution Approach 2:
The patent changes the electrical parameter (precharge potential level) at the sensing node based on temperature variations. By adjusting this voltage parameter dynamically, the system compensates for temperature-induced changes in cell currents, thereby maintaining sensing accuracy without fundamentally redesigning the circuit architecture
2Reliability
If the precharge potential level is increased to improve sensing margin, then the sensing reliability is improved, but the energy consumption increases
Solution Approach 1:
The precharge potential level is adjusted dynamically based on actual temperature conditions rather than being statically high. This allows the system to achieve reliable sensing only when necessary (at higher temperatures where cell currents are larger), reducing unnecessary energy consumption during normal operating conditions while maintaining sensing reliability when needed
Solution Approach 2:
The system changes the precharge potential level parameter adaptively based on temperature, rather than maintaining a constantly high level. This parameter adjustment ensures adequate sensing margin at elevated temperatures while minimizing energy consumption during normal operation
Data Source
AI summary
A semiconductor memory device may include a memory cell array, a plurality of page buffers respectively connected to a plurality of bit lines of the memory cell array, and a control logic configured to control the plurality of page buffers to perform an operation on the memory cell array, wherein each of the plurality of page buffers senses a current amount, which varies according to a potential level of a corresponding bit line among the plurality of bit lines, at a sensing node to read data, and a precharge potential level at the sensing node is adjusted according to a temperature.