Semiconductor Memory Page Programming State Detection

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor memory devices face reliability issues due to repeated programming of pages, leading to data loss and reduced performance, as existing methods fail to accurately determine the program state of memory cells, resulting in inefficient data storage and retrieval.

Innovation Solution

A method for operating semiconductor memory devices that involves receiving a program command and address, reading page data, determining the number of bits corresponding to the program state, and outputting a state fail signal if the number exceeds a threshold, thereby preventing repeated programming and ensuring reliable data storage by distinguishing between programmed and empty memory blocks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If repeated programming operations are performed on memory pages, then data storage capacity is increased, but reliability deteriorates due to data loss and reduced performance

Engineering Contradiction:
Improvedata storage capacityVSAvoidmemory reliability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent applies preliminary action by performing a read operation before the program operation to check the current state of memory cells. The controller reads page data, determines the number of bits in program state, and compares it with a threshold value before deciding whether to proceed with programming. This preliminary check prevents repeated programming of already programmed pages, thereby maintaining reliability while allowing data storage operations.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the number of bits in program state exceeds the threshold value, then programming is prevented to maintain reliability, but productivity decreases due to skipped program operations

Engineering Contradiction:
Improveprogram operation reliabilityVSAvoiddata storage efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent implements feedback by using the result of the read operation and bit count determination to control subsequent program operations. The controller counts the number of bits corresponding to program state in the read page data, compares this count with a threshold value, and uses this feedback information to decide whether to proceed with programming. This feedback mechanism ensures that programming is only performed when necessary (when bits in program state are less than or equal to the threshold), thereby maintaining reliability while optimizing productivity by avoiding unnecessary skipped operations.

Inventive Principle:
Principle #23Feedback

3Manufacturing precision

If page data is read and analyzed before programming, then programming accuracy is improved, but operation time increases due to additional read and determination steps

Engineering Contradiction:
Improveprogramming accuracyVSAvoidprogram operation time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent applies partial action by performing a read operation on only the necessary page data and analyzing only the relevant bits corresponding to program state. Rather than reading or analyzing entire memory blocks, the controller focuses on the specific page data needed for the program operation and counts only the bits in program state. This partial analysis approach ensures programming accuracy by checking the necessary conditions while minimizing time loss by avoiding unnecessary read and analysis operations on unrelated data.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS9727401B2Method of operating semiconductor memory device and memory system including semiconductor memory device
Publication Date: 2017.08.08 SK HYNIX INC
  • US9727401B2 patent drawing
  • US9727401B2 patent drawing
  • US9727401B2 patent drawing

AI summary

Disclosed is a method of operating a semiconductor memory device including a plurality of pages, including: receiving a program command, an address, and program data; reading page data from a selected page corresponding to the address in response to the program command; determining whether the number of bits of data corresponding to a program state among the page data is greater than a threshold value; and outputting a state fail signal without performing a program operation on the selected page based on a result of the determination.