Memory Page Read Disturb Mitigation via Variable Turn-On Timing
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Solution Overview
Problem
Memory systems face challenges in preventing the read disturb phenomenon, where holes remaining in a memory block's channel can affect electrical characteristics during read operations, leading to instability and reduced performance.
Innovation Solution
A memory system and operating method where the memory controller sets different initial turn-on times for the first selected page and subsequently selected pages, with a longer initial turn-on time for the first page to effectively remove hot holes and improve electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a uniform turn-on time is applied to all pages during read operation, then the operation is simple and fast, but hot holes remain in the channel causing read disturb phenomenon and degraded electrical characteristics
Solution Approach 1:
The patent segments the read operation into two distinct phases: a first read operation with a first turn-on time applied to a first selected page, and a second read operation with a second turn-on time applied to a second selected page. This segmentation allows different turn-on times to be applied to different pages, effectively removing hot holes from the channel while maintaining operational simplicity through structured control sequences.
2Reliability
If a longer turn-on time is applied to remove hot holes, then electrical characteristics improve, but the read operation time increases
Solution Approach 1:
The patent applies local quality by differentiating the turn-on time parameter across different pages. The first selected page receives a first turn-on time optimized for hot hole removal, while the second selected page receives a second turn-on time optimized for speed. This localized optimization ensures that the longer turn-on time is applied only where necessary to improve electrical characteristics, rather than uniformly across all pages.
3Reliability
If different turn-on times are applied to different pages, then hot hole removal is effective, but the control complexity increases
Solution Approach 1:
The patent implements preliminary action by establishing a structured control mechanism where the memory controller pre-determines the sequence of read operations and assigns appropriate turn-on times to each page based on their selection order. The first read operation is configured with the first turn-on time, and the second read operation is configured with the second turn-on time, creating a predictable and manageable control flow that reduces complexity through systematic organization.
Data Source
AI summary
There are provided a memory system and an operating method thereof. A memory system includes: a memory device including a plurality of memory blocks configured with a plurality of pages, the memory device performing a read operation in units of pages; and a memory controller configured to control the memory device to perform the read operation, wherein the memory device is controlled such that a first initial turn-on time of a turn-on voltage for a first selected page among the plurality of pages and a second turn-on time of the turn-on voltage for subsequently selected pages are different from each other.


