Memory Page Sensing With State Masking for Threshold Distribution
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Solution Overview
Problem
Current semiconductor memory devices face challenges in quickly detecting threshold voltage distributions for each state, which is essential for accurate data retrieval and storage, due to the time-consuming process of performing multiple sensing operations and comparing results with original data.
Innovation Solution
The semiconductor memory device employs a method where original data is stored in page buffers and masking is applied to target states during sensing operations, allowing for quick detection of threshold voltage distributions by isolating and counting bit data corresponding to specific states.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple sensing operations are performed to detect threshold voltage distribution for each state, then measurement precision is improved, but loss of time increases
Solution Approach 1:
The patent segments the detection process by applying masking to isolate specific states (e.g., programmed states vs. erased states) during sensing operations. This allows the system to focus on detecting threshold voltage distributions for individual states separately, improving measurement precision for each state while reducing the total time required compared to comprehensive multi-state detection
Solution Approach 2:
The patent applies masking as a preliminary action before sensing operations to pre-isolate the target state. By preparing the sensing latch with appropriate masking conditions in advance, the system can directly detect the threshold voltage distribution for the specific state of interest without performing multiple separate sensing operations for different states
Data Source
AI summary
The present technology provides a method of operating a semiconductor memory device detecting a threshold voltage distribution for memory cells included in a page selected from among a plurality of memory cells. The method of operating the semiconductor memory device includes selecting a target state in which the threshold voltage distribution is to be detected, determining a plurality of read voltages for dividing a voltage range in which a threshold voltage of the selected target state is distributed, and performing a plurality of sensing operations using the plurality of read voltages on the selected page. Masking to the target state is applied in each of the plurality of sensing operations.