Memory Device Partial Pages Segmentation

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Solution Overview

Problem

The challenge lies in increasing the net die in semiconductor memory devices without incurring significant investment costs or complexity, as scaling down line widths becomes increasingly difficult due to miniaturization limitations and large wafer implementation is costly and time-consuming.

Innovation Solution

The proposed solution involves a memory device architecture with a cell region divided into multiple memory blocks and sub-blocks, each coupled to bit lines and word lines, utilizing a pass transistor circuit and block switch circuit to efficiently manage data transfer and voltage distribution, allowing for a more compact and balanced layout.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the diameter of wafer is increased to increase net die, then productivity and price competitiveness are improved, but investment cost and equipment development complexity increase significantly

Engineering Contradiction:
Improvenet dieVSAvoidequipment development
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent divides a single large wafer into multiple smaller wafers, each containing a portion of the memory device. This segmentation allows standard-sized wafers to be used while achieving the equivalent net die of a larger wafer, avoiding the need for expensive large-wafer equipment while maintaining productivity.

Inventive Principle:
Principle #1Segmentation

2Productivity

If line width is scaled down to reduce chip size and increase net die, then chip size is reduced and net die is increased, but miniaturization technology limitations make it increasingly difficult

Engineering Contradiction:
Improvenet dieVSAvoidminiaturization technology
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

Instead of continuing to scale down line widths in the lateral dimension, the patent transitions to the vertical dimension by stacking multiple wafers and using three-dimensional transistor structures. This dimensional transition allows net die increase without further lateral miniaturization, avoiding the precision limitations of continued scaling.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Quantity of substance

If memory block size is increased to improve storage capacity, then storage capacity is improved, but access time and power consumption increase

Engineering Contradiction:
Improvestorage capacityVSAvoidaccess time
Core Design Contradiction:
Quantity of substanceVSLoss of time

Solution Approach 1:

Each memory block is divided into multiple sub-blocks that can be independently accessed. This segmentation allows the memory system to access only the specific sub-block containing the desired data, reducing access time and power consumption while maintaining large storage capacity through the aggregation of multiple sub-blocks.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS11961552B2Memory device including partial pages in memory blocks
Publication Date: 2024.04.16 SK HYNIX INC
  • US11961552B2 patent drawing
  • US11961552B2 patent drawing
  • US11961552B2 patent drawing

AI summary

A memory device includes a plurality of bit lines extending in a first direction and arranged in a second direction; and a cell region including a plane which is coupled to the plurality of bit lines, wherein the plane is divided into a plurality of memory groups each including a plurality of partial pages to be disposed in a plurality of rows in the first direction.