3D Memory Pillar Conductive Layer Segmentation
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Solution Overview
Problem
The process of replacing nitride layers with conductive layers in three-dimensional non-volatile memory devices often damages surrounding layers, leading to deteriorated device characteristics.
Innovation Solution
A semiconductor device design featuring pillars surrounded by alternately arranged conductive layers with non-conductive and conductive material regions, including first regions with non-conductive material layers and second regions with conductive material layers, which reduces manufacturing difficulties and prevents peripheral layer damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If nitride layers are replaced with conductive layers in the manufacturing process, then the device structure can be formed, but surrounding layers are damaged and device characteristics deteriorate
Solution Approach 1:
The conductive layer is segmented into first regions and second regions with different materials. The first regions contain conductive material that replaces the nitride layers, while the second regions contain non-conductive material that protects surrounding layers. This segmentation allows selective replacement of nitride layers without damaging adjacent structures.
Solution Approach 2:
Different regions of the conductive layer have different material compositions tailored to local requirements. The first regions use conductive materials for electrical functionality, while the second regions use non-conductive materials for protection. This local differentiation enables the manufacturing process to proceed without damaging surrounding layers.
2Productivity
If conventional manufacturing processes are used to replace nitride layers, then conductive layers can be formed, but peripheral layers suffer damage
Solution Approach 1:
The second regions act as intermediary protective elements between the conductive first regions and the surrounding peripheral layers. These non-conductive regions prevent harmful effects from propagating to adjacent structures during the manufacturing process, enabling high-yield production without peripheral damage.
3Reliability
If nitride layers are completely replaced with conductive material, then electrical functionality is achieved, but surrounding structures are compromised
Solution Approach 1:
The conductive layer is divided into functional first regions and protective second regions. This segmentation enables precise control over where conductive material is present (for electrical functionality) and where it is absent (to preserve structural integrity of surrounding layers).
Solution Approach 2:
The material composition parameter is changed spatially across the conductive layer. First regions have high conductivity for electrical function, while second regions have low conductivity or are non-conductive to protect surrounding structures. This parameter variation resolves the contradiction between electrical functionality and structural integrity.
Data Source
AI summary
A semiconductor device may include pillars and a plurality of conductive layers being stacked while surrounding the pillars and including a plurality of first regions including non-conductive material layers and a plurality of second regions including conductive material layers, wherein the first regions and the second regions are alternately arranged.