Memory Support Pillar Materials to Prevent Bending and Cracking
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Solution Overview
Problem
Conventional memory devices face challenges in reducing the number of support pillars while maintaining the structural integrity and strength of the memory device, leading to issues such as undesirable physical bending and cracking at the edges.
Innovation Solution
The use of support structures with materials different from those of adjacent contact pillars to mitigate stress imbalance and improve structural stability, reducing undesirable bending and cracking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the number of support pillars is reduced to decrease device complexity, then device complexity is reduced, but structural strength and stability deteriorate
Solution Approach 1:
The patent applies local quality by differentiating between support pillars in different regions. First region support pillars have different material composition or structural characteristics compared to second region support pillars, allowing each region to be optimized for its specific stress conditions while reducing the overall number of pillars needed
Solution Approach 2:
The patent employs composite materials by using support pillars with different material compositions in different regions. The first region pillars use materials optimized for their specific mechanical and electrical requirements, while second region pillars use different materials suited to their conditions, achieving enhanced structural strength with fewer pillars
2Productivity
If the number of support pillars is reduced to improve productivity, then manufacturing efficiency is improved, but manufacturing precision deteriorates
Solution Approach 1:
The patent implements local quality by configuring support pillars with region-specific characteristics. First region pillars are designed with properties suited to their location, and second region pillars are designed differently, allowing the structure to maintain high structural integrity with reduced pillar count, thereby improving manufacturing efficiency without sacrificing precision
Data Source
AI summary
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes tiers located one over another, the tiers including respective memory cells and control gates for the memory cells; a first pillar extending through the tiers and separated from the control gates, the first pillar including a first dielectric liner portion and a first core portion adjacent the first dielectric liner portion, the first dielectric liner portion and the first core portion extending along a length of the first pillar; and a second pillar extending through the tiers and separated from the control gates, the second pillar including a second dielectric liner portion and a second core portion adjacent the second dielectric liner portion, the second dielectric portion and the second core portion extending along a length of the second pillar, wherein the first core portion and the second core portion have different materials.