3D Memory Pillar Contact Structure for Uniform Trench Depth
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor memory devices face challenges in minimizing variations in electric characteristics due to inconsistencies in trench formation and memory pillar structure, leading to variations in contact area and electric performance.
Innovation Solution
The implementation of spacer films with specific angles and materials, such as polysilicon or carbon, during the manufacturing process helps maintain small variations in trench depth and contact area by acting as etching stoppers, stabilizing the memory pillar structure and reducing electric characteristic variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional trench formation methods are used, then manufacturing process is simple, but variations in trench depth and contact area increase
Solution Approach 1:
The patent applies preliminary action by forming spacer films before the etching process to define the trench depth. The spacer films are deposited and patterned in advance to serve as etching stoppers, ensuring consistent trench depth across all memory cells. This preliminary structuring prevents variations in trench depth that would otherwise occur during the etching process.
Solution Approach 2:
The patent introduces spacer films as intermediary elements between the etching process and the substrate. These spacer films act as mediators that control the etching depth by serving as stoppers, thereby preventing direct uncontrolled etching into the substrate and ensuring uniform trench depth and contact area across the memory device.
2Quantity of substance
If miniaturization is advanced to improve storage capacity, then storage capacity increases, but variations in electric characteristics increase
Solution Approach 1:
The patent applies local quality by forming contact holes and memory holes with precise local depth control using spacer films as etching stoppers. This ensures that each contact area maintains consistent dimensions and electrical characteristics, even as the overall device is miniaturized to increase storage capacity. The local precision in contact area formation prevents variations in electric characteristics.
Solution Approach 2:
The patent utilizes parameter changes by controlling the thickness and material composition of spacer films to precisely regulate etching depth. By adjusting the spacer film parameters (thickness, material), the etching process achieves consistent trench depth and contact area dimensions, maintaining electric characteristic consistency despite device miniaturization for increased storage capacity.
3Manufacturing precision
If spacer films are used to control trench depth, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
The patent applies universality by designing spacer films that serve multiple functions: they act as etching stoppers to control trench depth, define contact hole positions, and serve as structural support during subsequent processing steps. This multi-functionality reduces the need for additional separate structures, thereby limiting the increase in device complexity while achieving improved manufacturing precision and consistent contact area dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a memory device with reduced variations in electric characteristics, enhancing performance consistency and reliability.
Implementation Method 1
The implementation of spacer films with specific angles and materials, such as polysilicon or carbon, during the manufacturing process helps maintain small variations in trench depth and contact area by acting as etching stoppers
Data Source
AI summary
First conductors and first insulators are alternately arranged one by one in a first direction in a first region. The first insulators and second insulators are alternately arranged one by one in the first direction in a second region. The memory pillar penetrates the first conductors and the first insulators in the first region and includes a semiconductor. A second conductor includes first to third portions. The second portion electrically couples the first portion and the third portion. A side surface of the third portion is electrically coupled to the semiconductor. A first film extends along the first direction in the second region. A second film contacts the first film, extends along the first direction, and includes carbon or metal. One of the second insulators includes a portion extending along the first and second films in the second region and being distanced from the second film.