Memory Support Pillars With Mixed Materials to Prevent Bending
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Solution Overview
Problem
Conventional memory devices face challenges in reducing the number of support pillars while maintaining the structural integrity and strength of the memory device, leading to issues such as undesirable physical bending and cracking at edges during manufacturing.
Innovation Solution
Incorporation of support structures with materials different from those of adjacent contact pillars to mitigate stress imbalance, thereby enhancing the structural stability of memory devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the number of support pillars is reduced to decrease device complexity, then device complexity is reduced, but structural strength deteriorates leading to physical bending and cracking
Solution Approach 1:
The patent applies local quality by differentiating between support pillars in different regions. First region support pillars have different material composition or structural characteristics compared to second region support pillars, allowing each region to be optimized for its specific stress conditions while reducing the overall number of pillars needed
Solution Approach 2:
The patent employs composite materials by using support pillars with different material compositions in different regions. The first region pillars may use materials optimized for high stress areas, while second region pillars use materials suited for lower stress areas, thereby maintaining overall structural strength with fewer pillars
2Productivity
If the number of support pillars is reduced to improve manufacturing efficiency, then productivity is improved, but manufacturing precision deteriorates due to increased stress imbalance
Solution Approach 1:
The patent addresses stress balance by implementing local quality variations in support pillar design. Different regions of the memory device have support pillars with tailored properties (material composition, dimensions, or structure) that compensate for regional stress differences, preventing manufacturing precision issues even with reduced pillar counts
Data Source
AI summary
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes tiers located one over another, the tiers including respective memory cells and control gates for the memory cells; a first pillar extending through the tiers and separated from the control gates, the first pillar including a first dielectric liner portion and a first core portion adjacent the first dielectric liner portion, the first dielectric liner portion and the first core portion extending along a length of the first pillar; and a second pillar extending through the tiers and separated from the control gates, the second pillar including a second dielectric liner portion and a second core portion adjacent the second dielectric liner portion, the second dielectric portion and the second core portion extending along a length of the second pillar, wherein the first core portion and the second core portion have different materials.


