3D Memory Cell Plug Contact Segmentation for Reliability
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Solution Overview
Problem
The operational reliability of three-dimensional semiconductor memory devices deteriorates as the number of stacked memory cells increases, leading to challenges in manufacturing efficiency and cost.
Innovation Solution
A semiconductor device design featuring a stacked body with insulating and conductive layers, a cell plug, and a connection contact structure with first and second connection contacts, where the connection contacts are positioned to match the levels of the cell plug's upper and lower portions, and a source layer coupled to the cell plug, allowing for efficient manufacturing by dividing the connection contact structure into first and second connection contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacked memory cells is increased to improve integration density, then the area occupied per unit area is reduced, but the operational reliability deteriorates
Solution Approach 1:
The connection contact structure is divided into first and second connection contacts at different levels, corresponding to lower and upper portions of the cell plug. This segmentation allows independent optimization of each contact's position and structure, improving manufacturing reliability while maintaining high integration density through selective formation at different depths
2Device complexity
If the connection contact structure is formed as a single unit, then the structure is simpler, but the manufacturing time and cost increase
Solution Approach 1:
The connection contact structure is segmented into first connection contact (at lower level) and second connection contact (at upper level), allowing parallel processing and selective formation. This reduces manufacturing time and cost while maintaining structural integrity through coordinated design of the segmented components
Solution Approach 2:
The first connection contact is formed at a lower level before the second connection contact at the upper level. This preliminary action allows optimization of each contact formation process independently, reducing overall manufacturing complexity and improving efficiency through staged fabrication
Data Source
AI summary
A semiconductor device includes a stacked body including stacked insulating layers and stacked conductive layers; a cell plug; a connection contact structure; and a source layer coupled to the cell plug. The cell plug includes upper and lower portions, the connection contact structure includes a first connection contact disposed at substantially the same level as the lower portion of the cell plug, and a second connection contact disposed at substantially the same level as the upper portion thereof, a level at which the first and second connection contacts contact each other is substantially the same as a level at which the upper and lower portions of the cell plug contact each other, and a level of an uppermost portion of the second connection contact is higher than a level of a bottom surface of the source layer, and is lower than a level of a top surface thereof.