3D Memory Contact Plug Spacers for Insulation and Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration density of two-dimensional non-volatile memory devices is limited, necessitating the development of three-dimensional structures with stacked memory cells, which requires improved manufacturing methods to enhance operational reliability and stability.
Innovation Solution
A semiconductor device with a stacked structure featuring contact plugs and insulating spacers with loop patterns that surround the contact plugs, providing electrical connectivity and improved insulation, along with a manufacturing method that includes forming alternating layers and etching to create openings for spacer formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional stacked structures are used to increase integration density, then memory capacity is improved, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process is divided into distinct stages: forming alternating first and second material layers, creating first openings through the stacked structure, forming second openings in exposed first material layers, and selectively removing portions of material layers. This segmentation allows complex 3D structures to be built through manageable sequential steps rather than attempting to create the entire structure in one process.
Solution Approach 2:
The alternating first and second material layers are formed in advance before any openings are created. This preliminary stacking of layers provides a pre-prepared template that guides subsequent opening formation and material removal processes, ensuring that the final 3D structure maintains proper alignment and spacing without requiring complex real-time adjustments.
2Reliability
If contact plugs are formed through the stacked structure to provide electrical connectivity, then device functionality is improved, but structural stability may be compromised
Solution Approach 1:
The first material layers serve as intermediary structures that are selectively removed to form openings for contact plugs, while the second material layers remain as structural support. This intermediary approach allows contact plugs to penetrate through the stacked structure for electrical connectivity while the remaining second material layers maintain the overall structural integrity of the device.
Solution Approach 2:
Different regions of the stacked structure have different properties: areas with contact plugs provide electrical connectivity, while areas with intact second material layers provide structural support. This local differentiation allows the same stacked structure to simultaneously fulfill both electrical and mechanical functions in different locations.
3Reliability
If insulating spacers with loop patterns are formed to improve insulation efficiency, then electrical isolation is improved, but manufacturing steps increase
Solution Approach 1:
The insulating spacer formation is merged with the opening formation process. Second openings are formed in the exposed first material layers during the same etching process that creates the first openings, and insulating spacers are deposited to fill both types of openings simultaneously. This merging reduces the total number of separate manufacturing steps while achieving comprehensive electrical isolation.
Solution Approach 2:
The insulating spacers serve multiple functions: they provide electrical isolation between adjacent contact plugs, maintain spacing between structural elements, and prevent short circuits in the three-dimensional stacked architecture. This multi-functionality allows a single component to address several reliability concerns without requiring separate structures for each function.
Data Source
AI summary
A semiconductor device includes a wiring structure, a stacked structure located over the wiring structure, channel structures passing through the stacked structure, contact plugs passing through the stacked structure and electrically connected to the wiring structure, and insulating spacers each including loop patterns surrounding a sidewall of each of the contact plugs and stacked along the sidewall of each of the contact plugs.