Memory Power Supply Circuit for Faster DRAM Turn-On
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Solution Overview
Problem
As the integration degree of storage cells in DRAM increases, the capacitive load in control circuits increases, reducing the turn-on speed and affecting the reading and writing speed of the memory.
Innovation Solution
A power supply circuit that provides a higher power voltage during the turning on stage of the control circuit, using a voltage control module to pull up the first power voltage through a second power voltage, improving the driving capability of function modules and enhancing the reading and writing speed of the memory.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the integration degree of storage cells is increased, then the storage density is improved, but the capacitive load in control circuits increases which reduces the turn-on speed
Solution Approach 1:
The power supply circuit provides a higher initial power voltage to the control circuit before normal operation begins. This preliminary high-voltage state pre-charges the capacitive load, enabling the control circuit to switch on faster when activated, thus resolving the speed penalty imposed by high integration density.
2Device complexity
If more components are connected in control circuits to achieve higher integration, then the storage density is improved, but the turn-on speed of control circuits is reduced
Solution Approach 1:
The patent changes the voltage parameter of the power supply by providing a higher initial power voltage during the turn-on phase. This parameter change compensates for the increased capacitive load caused by higher integration, allowing the control circuit to overcome the larger load and switch on faster despite the increased complexity.
3Quantity of substance
If the capacitive load in control circuits increases, then more storage cells can be controlled, but the reading and writing speed of memory is affected
Solution Approach 1:
By providing a higher initial power voltage before the control circuit is activated, the capacitive load is pre-charged. This preliminary action ensures that when the control circuit switches on, the voltage rise is faster, maintaining high reading and writing speeds even as the number of controllable storage cells increases.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves the turn-on speed of control circuits by increasing the power voltage, thereby enhancing the reading and writing speed of the memory.
Implementation Method 1
A voltage control module, connected to the first and second power networks, is configured to be turned on based on a voltage control signal, to pull up the first power voltage through a second power voltage
Data Source
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AI summary
A power supply circuit and a memory are provided. The power supply circuit includes: a voltage generation module, configured to provide an initial voltage signal; a first power supply module, configured to provide a power reference voltage based on the initial voltage signal; an amplification module, configured to generate and output a first power voltage based on the power reference voltage; a first power network, configured to supply power to at least one function module connected to the first power network; a second power supply module, configured to provide a second power voltage for a second power network based on the initial voltage signal. Corresponding nodes in the first power network and the second power network are connected through a voltage control module; the voltage control module is turned on based on the voltage control signal, so as to pull up the first power voltage through the second power voltage. The driving capability of the corresponding function module of the memory is improved by supplying higher power voltage, so that the reading and writing speed of the memory is improved.