3D Memory Channel Precharge Control for Program Disturbance

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Solution Overview

Problem

Memory devices with 3D structures experience disturbances in unselected memory cells due to varying electrical characteristics caused by tapered plugs, which affect threshold voltages during program operations, especially as cell sizes decrease, compromising reliability.

Innovation Solution

The memory device adjusts the time required to precharge the channel layer based on the size of selected memory cells, distinguishing areas prone to disturbances and areas not prone to disturbances, and controlling the precharge time accordingly during program operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If memory cells are stacked in 3D structure to increase capacity, then the number of memory cells increases, but disturbances occur in unselected memory cells due to tapered plugs

Engineering Contradiction:
Improvenumber of memory cellsVSAvoiddisturbance in unselected memory cells
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent applies different precharge times to different regions of the memory block based on their susceptibility to disturbance. Word lines are divided into first and second groups, where the first group (more prone to disturbance) receives a first precharge time and the second group (less prone) receives a second precharge time. This localized differentiation resolves the contradiction by maintaining reliability in critical regions while preserving the high capacity benefits of 3D stacking.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the time parameter of the precharge operation based on the selected word line position. When a word line from the first group is selected, a first precharge time is applied; when a word line from the second group is selected, a second precharge time is applied. This dynamic parameter adjustment resolves the contradiction between high density and reliability by adapting the precharge duration to the specific operational context.

Inventive Principle:
Principle #35Parameter changes

2Quantity of substance

If cell size is reduced to increase density, then more memory cells fit in the same area, but disturbances occur more frequently

Engineering Contradiction:
Improvememory cell densityVSAvoiddisturbances in unselected memory cells
Core Design Contradiction:
Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent recognizes that smaller memory cells in certain regions (first group word lines) are more susceptible to disturbance and applies a differentiated precharge strategy. By identifying regions with higher disturbance risk and applying extended precharge times specifically to those regions, the patent resolves the contradiction between high density and resistance to harmful effects.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent applies preliminary precharge operations before the actual program operation to counteract potential disturbances. By precharging the channel layer in advance with appropriate timing based on the selected word line group, the patent creates a protective state that prevents disturbance from occurring in the first place, thereby maintaining reliability despite reduced cell size.

Inventive Principle:
Principle #9Preliminary anti-action

3Ease of operation

If uniform precharge time is applied to all word lines, then the operation is simple, but disturbances cannot be prevented in vulnerable regions

Engineering Contradiction:
Improveprecharge operation simplicityVSAvoiddisturbance prevention
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The patent divides word lines into distinct groups (first and second groups) with different disturbance characteristics and applies different precharge times to each group. This localized approach maintains operational simplicity through systematic classification while effectively preventing disturbances in vulnerable regions, resolving the contradiction between ease of operation and reliability.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent segments the word lines into multiple groups based on their susceptibility to disturbance. By dividing the word line set into first and second groups with different precharge requirements, the patent creates a manageable segmented structure that balances operational simplicity with effective disturbance prevention through targeted precharge strategies.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20260080957A1Memory device and method of operating the same
Publication Date: 2026.03.19 SK HYNIX INC
  • US20260080957A1 patent drawing
  • US20260080957A1 patent drawing
  • US20260080957A1 patent drawing

AI summary

Provided herein may be a memory device. The memory device may include a memory block configured to include a first selection line, word lines, a second selection line, a channel layer, first select transistors, second select transistors, and memory cells; a voltage generator configured to generate a turn-on voltage and a turn-off voltage to be applied to the first and second selection lines, and generate a program voltage and a pass voltage to be applied to word lines; a source line driver configured to generate a precharge voltage to be applied to the source line; a page buffer group configured to apply a program-enable voltage and a program-inhibit voltage to bit lines; and a control circuit configured to determine a reference position and control the voltage generator, the source line driver, and the page buffer group to adjust time required to precharge the channel layer.