Memory Device Pre-Charging Circuit for Fast Read Speed
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Solution Overview
Problem
Conventional memory devices have slow read operations due to the need for pre-charging and sensing voltage differences between complementary data lines, which limits their speed and efficiency.
Innovation Solution
Incorporating a cross-coupled circuit that pre-charges data lines to a high voltage level and uses a high speed voltage node to quickly sense voltage differences, allowing for faster data reading by pulling one line to a low voltage level and the other to a high speed voltage level, enabling rapid detection of bit values.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional pre-charging and sensing method is used, then the memory device can perform read operations, but the read operation speed is slow
Solution Approach 1:
The patent applies preliminary action by pre-charging the first and second lines to a high voltage level before the read operation begins. This preparatory step ensures that the lines are ready for rapid sensing, reducing the time required during the actual read operation. The pre-charging circuit charges the lines in advance, so when the read operation is initiated, the sensing can occur more quickly without waiting for voltage buildup.
Solution Approach 2:
The patent utilizes parameter changes by dynamically adjusting voltage levels during the read operation. After pre-charging to a high voltage level, the system transitions to sensing voltage differences that pull lines toward low voltage levels. The sensing circuit detects these voltage parameter changes to determine stored bits, enabling faster read operations through controlled voltage transitions rather than relying solely on gradual charging.
2Ease of operation
If voltage levels are kept at high level continuously, then the lines are ready for sensing, but energy consumption increases
Solution Approach 1:
The patent implements periodic action by charging the first and second lines to a high voltage level only when needed for read operations, rather than maintaining high voltage continuously. The pre-charging circuit operates periodically to recharge the lines after they have discharged during sensing operations. This periodic charging approach maintains operational readiness while significantly reducing overall energy consumption compared to continuous high-voltage maintenance.
Data Source
AI summary
Embodiments herein include a first line, wherein the first line is complementary to a second line; a voltage generator configured to generate a first supply voltage, a second supply voltage and a third supply voltage, the third supply voltage is lower than the second supply voltage, the voltage generator further comprises a transistor structure with a plurality of transistors electrically connected in parallel from the first supply voltage to a supply output node that provides the second supply voltage; a memory cell electrically coupled to the first and second lines, the memory cell further comprises two cross-coupled transistor strings connected from the first supply voltage to a ground voltage; a pre-charger with a first pre-charger transistor cross-coupled to a second pre-charger transistor, the pre-charger is configured to pre-charge the first and second lines to a level of a source voltage.