Semiconductor Memory Program Voltage Control for Cell Count
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Solution Overview
Problem
The existing semiconductor memory devices face degradation in program characteristics due to fluctuations in program voltage levels when programming multiple memory cells simultaneously, leading to insufficient cell currents and potential program failures.
Innovation Solution
A semiconductor memory device with a program voltage generator that adjusts the program voltage levels based on the number of memory cells to be programmed, using a regulator and charge pump to maintain consistent voltage through voltage division and selection circuits, ensuring optimal voltage application for hot electron injection programming.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple memory cells are programmed simultaneously with a fixed program voltage, then programming speed is improved, but program voltage stability deteriorates leading to program failures
Solution Approach 1:
The patent implements dynamic adjustment of the program voltage based on the number of memory cells being programmed simultaneously. The program voltage generator modifies the voltage level in real-time according to the programming workload, ensuring voltage stability even when multiple cells are programmed at once, thus maintaining both high productivity and reliability
Solution Approach 2:
The system incorporates a feedback mechanism where the program voltage generator receives information about the number of cells to be programmed and adjusts the program voltage accordingly. This closed-loop control ensures that the program voltage remains within the optimal range (5.5V to 6.5V) regardless of the programming batch size, preventing program failures while maintaining fast programming speeds
2Productivity
If program voltage is increased to program more cells simultaneously, then productivity is improved, but manufacturing precision deteriorates due to voltage fluctuations
Solution Approach 1:
Rather than using a fixed high voltage that causes fluctuations, the system dynamically adjusts the program voltage to match the specific programming task. When more cells are programmed simultaneously, the voltage is adjusted within the optimal range to compensate for increased current draw, ensuring consistent programming results across all cells regardless of batch size
Solution Approach 2:
The patent changes the program voltage parameter based on the number of cells being programmed. The program voltage generator modifies the voltage level within the 5.5V to 6.5V range according to the programming workload, ensuring that manufacturing precision is maintained even when programming multiple cells simultaneously, thus improving productivity without sacrificing quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution prevents program characteristic degradation by maintaining stable program voltages across varying numbers of memory cells, reducing the risk of program failures and ensuring reliable data programming.
Implementation Method 1
a program voltage generator that adjusts the program voltage levels based on the number of memory cells to be programmed, using a regulator and charge pump to maintain consistent voltage
Implementation Method 2
using a regulator and charge pump to maintain consistent voltage through voltage division and selection circuits
Implementation Method 3
NOR flash memory is used in mobile telephone terminals because NOR flash memory provides fast data processing and is operable at high frequencies. NAND flash memory conducts programming and erasing operations by means of Fowler-Nordheim (F-N) tunneling. In NOR flash memory, programming operations are carried out by hot electron injection
Data Source
AI summary
A semiconductor memory device controlling a program voltage according to the number of cells to be programmed and a method of programming the same. The semiconductor memory device includes a memory cell array. A write data buffer receives write data in a predetermined unit. A program cell counter calculates the amount of data, from the write data, to be programmed in the memory cell array. A program voltage generator outputs a program voltage to be applied to the memory cell array, in accordance with the amount of data to be programmed, at a time, in the memory cell array. The program voltage is controlled in accordance with the number of memory cells to be programmed.