Memory Cell Group Programming for Degradation-Aware Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The reliability of non-volatile memory devices is compromised due to accelerated lifetime cycle degradation under stress conditions, leading to trapped charges escaping from oxide layers and affecting data window size and critical voltage.
Innovation Solution
A memory device and programming method that includes performing program and verify operations on memory cell groups, calculating programming times, setting indication flags for degraded cells, and enhancing programming parameters such as verification voltage and pulse width to compensate for degraded cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If memory cells are repeatedly written and erased, then data storage capacity is maintained, but trapped charges escape from oxide layer causing reliability degradation
Solution Approach 1:
The patent performs preliminary detection of programming time for each memory cell group before final data storage. By calculating whether the programming time exceeds a threshold value, the system proactively identifies degraded memory cells and applies compensation operations in advance, preventing reliability issues before they manifest as data errors.
Solution Approach 2:
The patent dynamically adjusts programming parameters based on detected memory cell conditions. When programming time exceeds the threshold, the system modifies programming parameters (such as increasing programming pulses or adjusting voltage levels) to compensate for degraded cells, thereby maintaining data reliability despite repeated write/erase cycles.
2Reliability
If enhancement programming operation is performed on all memory cell groups, then data reliability is improved, but programming time increases
Solution Approach 1:
The patent applies enhancement programming operations selectively only to memory cell groups that exhibit degraded characteristics (programming time > threshold). Healthy memory cell groups undergo normal programming without additional operations. This localized approach ensures reliability improvement where needed while minimizing overall programming time penalty.
Solution Approach 2:
The system implements feedback by monitoring programming time for each memory cell group and using this information to determine whether enhancement operations are required. This closed-loop control enables the system to adapt programming strategies based on actual memory cell conditions, avoiding unnecessary operations on healthy cells and reducing overall time loss.
Data Source
AI summary
A memory device and an enhance programming method thereof are provided. The enhance programming method includes: performing program and verifying operations on a plurality of memory cell groups of a memory division, where each of the memory cell group corresponds to at least one byte; calculating a programming time for completing program operation of each of the memory cell groups; setting an indication flag when the programming time is larger than a preset threshold value; and, when the indication flag is in a setting state, increasing at least one of a plurality of program operation parameters, and performing an enhancement programming operation on the memory cell groups of the memory division.