Memory Programming Step Size Adjustment for Temperature-Induced RBER
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Solution Overview
Problem
Conventional memory systems face increased raw bit error rates (RBER) due to temperature fluctuations, which can exceed the error correction capability, especially when threshold voltage distributions widen and shift at lower temperatures, leading to incorrect voltage level associations and data integrity issues.
Innovation Solution
The memory system adjusts the programming step size based on temperature changes, reducing the step size when temperatures drop below a threshold to maintain tighter voltage distributions and reduce RBER, and reverts to the default step size when temperatures return to normal, thereby minimizing the impact of extreme temperature changes on data storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a fixed programming step size is used, then programming operation is simple and fast, but voltage distributions widen and shift at lower temperatures causing increased RBER
Solution Approach 1:
The programming step size is changed from a fixed value to a dynamic value that varies based on temperature conditions. The controller adjusts the step size between a first value (at normal temperatures) and a second value (at lower temperatures), making the programming operation adaptive to environmental conditions rather than static.
Solution Approach 2:
The patent changes the programming parameter (step size) based on temperature conditions. By monitoring temperature and adjusting the programming step size accordingly, the system optimizes voltage distribution tightness and reduces RBER at lower temperatures while maintaining normal operation at higher temperatures.
2Reliability
If programming step size is reduced to maintain tighter voltage distributions, then RBER is reduced, but programming time increases excessively
Solution Approach 1:
Instead of using a consistently small programming step size that would ensure tight voltage distributions but increase programming time, the patent dynamically changes the step size based on temperature. At normal temperatures, a larger step size is used for faster programming, while at lower temperatures, a smaller step size is used to maintain voltage distribution tightness and reduce RBER.
Solution Approach 2:
The programming step size is made dynamic rather than static, adjusting between a first value and a second value based on temperature conditions. This dynamic adjustment allows the system to optimize between programming speed and voltage distribution quality according to environmental conditions.
3Ease of operation
If default programming parameters are used across all temperatures, then programming operation is consistent, but temperature fluctuations cause voltage distributions to shift leading to data integrity issues
Solution Approach 1:
The patent changes the programming parameters based on temperature conditions rather than using a fixed default. By adjusting the programming step size according to temperature, the system maintains voltage distribution integrity and data reliability across varying thermal environments.
Solution Approach 2:
The system monitors temperature conditions and uses this feedback to adjust programming parameters. The controller detects temperature changes and accordingly modifies the programming step size to maintain optimal voltage distributions and ensure data integrity.
Data Source
AI summary
A processing device, operatively coupled with a memory device, is configured to identify a temperature related to a memory device of a plurality of memory devices; to determine, whether the temperature satisfies a threshold temperature condition; responsive to detecting that the temperature related to the memory device satisfies the threshold temperature condition, to identify an entry associated with the memory device from a plurality of entries in a data structure, wherein each entry of the plurality of entries corresponds to one of the plurality of memory devices; to determine a parameter value associated with the memory device from the entry, wherein the parameter value is for a programming operation to store data at the memory device; to adjust the parameter value associated with the memory device to generate an adjusted parameter value; and to store the adjusted parameter value in the entry of the data structure.