Memory Read Boost Modulation for Low-Latency Soft Decoding

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Solution Overview

Problem

Existing memory systems face inefficiencies in read operations due to high latency and complexity in error correction, particularly when using soft-decision decoding techniques, which are costly and time-consuming.

Innovation Solution

Implementing boost modulation in memory devices by performing only one additional read strobe during read operations to obtain half-bit 'soft' data, reducing latency and complexity while maintaining accuracy through adjusted threshold voltage levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If soft-decision decoding techniques are used for error correction in memory read operations, then decoding accuracy is improved, but read operation latency and system complexity increase

Engineering Contradiction:
Improvedecoding accuracyVSAvoidread operation latency
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent changes the voltage parameter by applying a boost voltage to the bit line during the read operation. This voltage boost enhances the signal strength and enables more accurate sensing of the memory cell state, providing reliable soft information without requiring multiple read strobes or complex iterative decoding processes, thus reducing latency while maintaining high decoding accuracy

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent performs preliminary action by pre-charging the bit line to a boosted voltage level before the actual read operation. This preliminary voltage boost prepares the sensing circuitry to accurately detect the memory cell state in a single operation, eliminating the need for subsequent corrective read operations and reducing overall read latency

Inventive Principle:
Principle #10Preliminary action

2Reliability

If multiple read strobes are performed to obtain soft information for error correction, then decoding accuracy is improved, but read operation complexity and time consumption increase

Engineering Contradiction:
Improvedecoding accuracyVSAvoidread operation complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts only the essential soft information needed for accurate decoding by performing a single read strobe with boost modulation. Instead of executing multiple read operations to gather comprehensive soft data, the boosted voltage approach extracts sufficient information in one operation, simplifying the read pathway while maintaining decoding accuracy

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

By changing the voltage parameter (applying boost voltage), the patent enables a single read strobe to provide adequate soft information for error correction. This parameter change eliminates the need for multiple read operations and complex soft information aggregation, reducing read operation complexity while preserving decoding reliability

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20250377794A1Read operation with boost modulation in memory devices
Publication Date: 2025.12.11 MICRON TECHNOLOGY INC
  • US20250377794A1 patent drawing
  • US20250377794A1 patent drawing
  • US20250377794A1 patent drawing

AI summary

An example system includes a memory device and a processing device operatively coupled to the memory device. The processing device is configured to: produce a first data item by performing, using a first boost voltage level, a first read strobe with respect to a set of memory cells storing encoded data item; apply an offset to the first boost voltage level to produce a second boost voltage level; produce a second data item by performing, using the second boost voltage level, a second read strobe with respect to the set of memory cells; and produce, based on the first data item and the second data item, decoded data item corresponding to the encoded data item.