Memory Read Compensation for Charge Coupling and Lateral Migration

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Solution Overview

Problem

Memory devices face challenges in accurately reading data due to charge coupling and lateral migration phenomena, leading to widened threshold voltage distributions and reduced read window budgets, which result in increased bit errors and error rates.

Innovation Solution

A compensation management component (CMC) adjusts memory access operations by determining the minimum level of aggressor cell state information needed to compensate for charge coupling and lateral migration effects, optimizing read and write operations to achieve a sufficient read window budget increase without resorting to perfect compensation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If perfect compensation for charge coupling and lateral migration is implemented, then read window budget increases and bit error rate decreases, but resource consumption and operation time increase significantly

Engineering Contradiction:
Improvebit error rateVSAvoidcompensation operation time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies partial compensation by determining the minimum level of aggressor cell state information needed to achieve sufficient read window budget increase. Instead of implementing perfect compensation for all possible aggressor cell states, the system identifies and compensates only for the most significant effects, achieving acceptable error rates with reduced operational overhead.

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The system dynamically adjusts compensation parameters based on actual read conditions and observed error patterns. By modifying compensation strength and aggressor cell state tracking granularity, the system optimizes the balance between read window budget improvement and operation time consumption.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If full aggressor cell state information is collected and processed, then compensation accuracy improves, but device complexity and processing overhead increase

Engineering Contradiction:
Improvecompensation accuracyVSAvoidcompensation management complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent extracts only the essential aggressor cell state information needed for effective compensation. Instead of collecting and processing complete state information for all aggressor cells, the system identifies and processes only the critical subsets that have the most significant impact on read window budget, reducing processing complexity while maintaining compensation effectiveness.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The system applies different levels of compensation analysis to different regions of the memory array based on local coupling characteristics. By identifying which aggressor cells have the most significant impact on each victim cell and applying targeted compensation only where needed, the system reduces overall processing complexity while maintaining local compensation accuracy.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces resource and time consumption while effectively mitigating charge coupling and lateral migration effects, improving memory device reliability and reducing bit errors without the overhead of perfect compensation.

Implementation Method 1

charge coupling and lateral migration effects

Methodology Applied
Scientific EffectCharge coupling: Parasitic Capacitance

Implementation Method 2

charge coupling and lateral migration effects

Methodology Applied
Scientific EffectLateral migration: Diffusion

Data Source

PatentUS12412632B2Managing compensation for charge coupling and lateral migration in memory devices
Publication Date: 2025.09.09 MICRON TECHNOLOGY INC
  • US12412632B2 patent drawing
  • US12412632B2 patent drawing
  • US12412632B2 patent drawing

AI summary

Embodiments disclosed can include selecting a target read window budget (RWB) increase and identifying a set of aggressor memory cells. They can also include generating a list of programming level states for the set of aggressor memory cells and identifying, in the list, an entry associated with a maximum RWB increase that is greater than or equal to the target RWB increase. They can further include responsive to identifying the entry with the total number of bits associated with a maximum RWB increase that is greater than or equal to the target RWB increase, modifying a parameter of the memory access operation with the adjustment associated with the identified entry.