Nonvolatile Memory Read Path with ECC-First De-Randomization
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Solution Overview
Problem
Nonvolatile semiconductor memory devices face performance slowdowns due to error detection and correction operations, which hinder read and write speeds.
Innovation Solution
Incorporating an on-chip error correcting circuit (ECC) and an on-chip randomizer within the nonvolatile memory device, where data is stored in a page buffer, error decoding is performed, and data is de-randomized after error correction, optimizing read and write operations by minimizing overhead during these processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If error detection and correction operations are performed in the nonvolatile memory device, then data reliability is improved, but read and write speed deteriorates
Solution Approach 1:
The patent performs de-randomization operation after error correction decoding but before outputting the data. By preparing the data in advance with the appropriate randomization pattern, the system eliminates the need for additional randomization processing during data output, thereby improving read speed while maintaining data reliability through proper error correction
2Reliability
If error detection and correction operations are performed in the nonvolatile memory device, then data integrity is improved, but read performance deteriorates
Solution Approach 1:
The system performs de-randomization as a preliminary action after error correction, preparing the data in advance so that no additional randomization processing is needed during output. This preliminary preparation maintains data integrity while significantly improving read performance by eliminating processing delays
3Reliability
If on-chip ECC and randomizer are used, then read speed and reliability are improved, but device complexity increases
Solution Approach 1:
The patent integrates both the error correction decoding function and the de-randomization function within the same on-chip circuitry. By merging these two functions into a unified processing stage, the system achieves improved read reliability through proper error correction and de-randomization while minimizing the increase in device complexity that would result from having separate dedicated circuits for each function
Data Source
AI summary
A read method of a nonvolatile memory device is provided. The method includes storing data sensed from selected memory cells of the nonvolatile memory device into a page buffer, performing an error decoding operation by performing error detection on the sensed data to detect and error, correcting the detected error if the error is detected, and overwriting the page buffer with the corrected data, and de-randomizing data stored in the page buffer by using a seed after the error decoding operation has completed.


