Memory Controller Read Failure Testing for Bad Block Detection

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Solution Overview

Problem

Flash memory devices experience read errors due to threshold voltage shifts caused by usage, environmental changes, and manufacturing defects, leading to data loss and increased read delays as existing error handling mechanisms fail to identify irrecoverable block failures, resulting in decreased reading speed and reliability.

Innovation Solution

A memory test is performed on blocks with read errors to determine if they malfunction, identifying bad blocks and preventing further data loss by labeling them as such, thus avoiding repeat erasing and writing that can decrease reading speed and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If error handling mechanisms are repeatedly applied to blocks with read errors, then data recovery attempts are made, but reading speed decreases and reliability deteriorates due to repeat erasing and writing operations

Engineering Contradiction:
Improvedata storage integrityVSAvoidreading speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent performs a memory test on the block before attempting error handling mechanisms to preliminarily determine whether the block is malfunctioning. This preliminary action identifies bad blocks in advance, preventing subsequent repeated error handling operations that would degrade reading speed while maintaining data integrity through proactive block identification.

Inventive Principle:
Principle #10Preliminary action

2Productivity

If existing error handling mechanisms are used to handle read errors, then data recovery is attempted, but the mechanisms fail to identify irrecoverable block failures resulting in repeated operations

Engineering Contradiction:
Improveerror handling efficiencyVSAvoidread error resolution
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent introduces a memory test performed before error handling mechanisms to preliminarily identify whether a block is malfunctioning. This preliminary identification improves error handling efficiency by preventing wasted operations on irrecoverable blocks while enhancing reliability through accurate bad block detection.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements a feedback mechanism where the results of the memory test are used to determine whether to proceed with error handling mechanisms. This feedback loop ensures that only blocks with potential recoverability undergo error handling, improving both efficiency and reliability by avoiding futile operations on permanently damaged blocks.

Inventive Principle:
Principle #23Feedback

3Reliability

If memory tests are performed on all blocks with read errors, then bad blocks are identified and labeled, but additional time and processing are required

Engineering Contradiction:
Improveblock failure identificationVSAvoidtime for memory testing
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent performs memory tests as a preliminary action before error handling mechanisms, which虽然 requires additional time initially, but prevents much longer time losses from repeated failed error handling operations. The upfront testing time is offset by eliminating subsequent wasteful operations on irrecoverable blocks.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS11521701B2Memory controller with read error handling
Publication Date: 2022.12.06 YANGTZE MEMORY TECH CO LTD
  • US11521701B2 patent drawing
  • US11521701B2 patent drawing
  • US11521701B2 patent drawing

AI summary

In certain aspects, a controller for controlling a memory device includes a memory and a processor. The memory is configured to store instructions. The processor is coupled to the memory and configured to execute the instructions to perform a process including receiving data describing a read failure of a set of error handling mechanisms, where the read failure indicates that the set of error handling mechanisms handles a read error on a block of the memory device and fails to read data stored in the block; and responsive to the read failure of the set of error handling mechanisms, performing a memory test on the block to determine whether the block malfunctions.