Nonvolatile Memory Read Mode Selection via Internal Write Mode Comparison

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Solution Overview

Problem

Existing semiconductor memory devices lack the ability to perform read operations independently of external device control, which limits their operational efficiency and speed.

Innovation Solution

A nonvolatile memory device with a memory cell array, mode cell area, and mode information storage block that allows for the selection of a read mode based on comparison of write mode information, enabling read operations without external control by storing and updating write mode information internally.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If read operations require external device control, then device complexity is reduced, but operational speed and efficiency deteriorate

Engineering Contradiction:
Improveoperational speedVSAvoiddevice complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The memory device performs read operations autonomously by comparing write mode information stored in the mode cell area with previous write mode information stored in the mode information storage block. The control logic automatically selects the appropriate read mode without requiring external device control, enabling the device to serve itself and improve operational speed.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The device stores write mode information in the mode cell area during write operations, preparing this information in advance for future read operations. This preliminary storage of mode information enables the control logic to quickly determine the appropriate read mode without requiring external control during the actual read operation, thereby improving operational speed.

Inventive Principle:
Principle #10Preliminary action

2Productivity

If read operations are performed autonomously, then productivity is improved, but device complexity increases

Engineering Contradiction:
Improveoperational efficiencyVSAvoiddevice complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The memory device is divided into distinct functional areas: a mode cell area for storing write mode information, a mode information storage block for storing previous write mode information, and a control logic for comparing and selecting read modes. This segmentation allows each component to perform its specific function efficiently, improving overall productivity while managing complexity through modular design.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The control logic acts as an intermediary that compares write mode information from the mode cell area with previous write mode information from the mode information storage block. Based on this comparison, the control logic automatically selects the appropriate read mode, enabling autonomous read operations that improve productivity without requiring complex external control mechanisms.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Extent of automation

If mode information is stored internally, then dependency on external control is reduced, but manufacturing complexity increases

Engineering Contradiction:
ImproveautonomyVSAvoidmanufacturing complexity
Core Design Contradiction:
Extent of automationVSEase of manufacture

Solution Approach 1:

The mode cell area and mode information storage block are integrated within the memory device structure, merging the storage of write mode information and previous write mode information into a unified internal system. This integration reduces dependency on external control by enabling internal comparison and automatic read mode selection, while the merged design simplifies manufacturing compared to separate external storage components.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS9728264B2Nonvolatile memory device, operating method thereof, and data storage device including the same
Publication Date: 2017.08.08 SK HYNIX INC
  • US9728264B2 patent drawing
  • US9728264B2 patent drawing
  • US9728264B2 patent drawing

AI summary

A nonvolatile memory device includes a memory cell array including a data cell area, and a mode cell area that stores write mode information of the data cell area, a mode information storage block storing previous write mode information read out from the mode cell area in a previous read operation, and a control logic reading out the write mode information from the mode cell area comparing the read-out write mode information and the previous write mode information, and reading the data cell area in a read mode selected based on a comparison result.