Memory Block Read Control Using Adaptive Pass Voltage
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Solution Overview
Problem
Frequent read reclaim operations in storage devices degrade performance, necessitating a solution to improve reliability while maintaining initial performance.
Innovation Solution
A storage device that adjusts the pass voltage applied to unselected word lines based on the number of read operations performed on a target memory block, delaying the read reclaim operation and optimizing voltage levels to enhance reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If read reclaim operation is performed frequently to improve reliability, then reliability is improved, but performance deteriorates
Solution Approach 1:
The patent changes the pass voltage parameter based on the number of read operations performed on a memory block. When the read operation count reaches a threshold, the pass voltage is adjusted to a higher level to prevent read fall, thereby improving reliability without requiring frequent read reclaim operations that would degrade performance
Solution Approach 2:
The patent performs preliminary detection of read operation counts and proactively adjusts the pass voltage before read fall occurs. By monitoring the number of read operations and preemptively increasing the pass voltage when the threshold is reached, the system prevents reliability issues before they arise, avoiding the need for reactive read reclaim operations that would impact performance
2Reliability
If pass voltage is increased to prevent read fall, then reliability is improved, but energy consumption increases
Solution Approach 1:
The patent dynamically adjusts the pass voltage based on the actual read operation count of each memory block rather than applying a fixed high voltage universally. The pass voltage is increased only for memory blocks that have reached the threshold read operation count, while other blocks continue to use the normal pass voltage level, thereby improving reliability where needed while minimizing overall energy consumption
Solution Approach 2:
The patent applies different pass voltage levels to different memory blocks based on their individual read operation histories. Memory blocks with high read operation counts receive increased pass voltage to prevent read fall, while memory blocks with lower read operation counts use the standard pass voltage, creating a localized quality approach that optimizes both reliability and energy efficiency
Data Source
AI summary
Provided herein may be a storage device and a method of operating the same. The storage device may include a memory device including a plurality of memory blocks connected to a plurality of word lines, respectively, and configured to perform a read operation on a target memory block among the plurality of memory blocks, and a memory controller configured to control the memory device to adjust a pass voltage depending on whether a number of read operations performed on the target memory block reaches a first number, and apply the adjusted pass voltage to at least one unselected word line among the plurality of word lines.