Memory Read Error Handling With Shorter Sensing Time
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Solution Overview
Problem
Current memory systems face challenges in read error handling due to longer sensing durations, which degrade memory cell reliability and read performance, especially as cells become smaller, and do not provide sufficient benefits in reducing bit error counts.
Innovation Solution
Implementing shorter sensing durations during read error handling procedures to upshift voltage threshold distributions, thereby increasing memory cell reliability and reducing bit error counts, while also allowing for faster read operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If longer sensing durations are used in read error handling procedures, then bit error count reduction may be achieved, but memory cell reliability degrades and read performance worsens
Solution Approach 1:
The patent applies dynamics by making the sensing duration variable rather than fixed. The memory system dynamically adjusts the sensing duration based on the operational context: using shorter sensing durations during normal read operations to maintain reliability and voltage threshold stability, and selectively extending sensing duration only when specifically needed for error handling scenarios. This dynamic adjustment resolves the contradiction by allowing the system to achieve bit error reduction when necessary without permanently degrading memory cell reliability.
Solution Approach 2:
The patent changes the sensing duration parameter based on operational conditions. By implementing different sensing duration values for different operational modes (normal read vs. error handling), the system can optimize bit error count reduction while preventing excessive voltage threshold downshift. The parameter change allows the system to achieve better measurement precision for bit errors only when needed, while maintaining memory cell reliability during常规 operations.
2Measurement precision
If longer sensing durations are used during read operations, then bit error detection may improve, but read time increases and read performance decreases
Solution Approach 1:
The system dynamically adjusts sensing duration based on operational context. During normal read operations, shorter sensing durations are used to maintain fast read performance. During error handling procedures, the sensing duration is extended only when specifically needed to detect and correct bit errors. This dynamic approach resolves the contradiction by allowing enhanced bit error detection only when necessary, while maintaining fast read times for常规 operations.
Solution Approach 2:
The patent implements parameter changes by using different sensing duration values for different operational modes. The sensing duration parameter is set to a shorter value for normal reads to maintain speed, and extended to a longer value during error handling procedures to improve bit error detection. This parameter adaptation resolves the contradiction between measurement precision and time loss.
3Productivity
If shorter sensing durations are used, then read performance and memory cell reliability improve, but bit error count reduction becomes insufficient
Solution Approach 1:
The system dynamically selects sensing duration based on operational context. During normal read operations, shorter sensing durations are used to maintain high read performance and prevent voltage threshold downshift. During error handling procedures, the system switches to longer sensing durations to achieve sufficient bit error count reduction. This dynamic switching resolves the contradiction by allowing the system to optimize for read performance when errors are not an issue, and optimize for error detection when needed.
Solution Approach 2:
The patent changes the sensing duration parameter based on operational mode. By implementing parameter changes that extend sensing duration specifically during error handling procedures rather than using it continuously, the system achieves sufficient bit error count reduction only when necessary, while maintaining fast read performance during常规 operations. This selective parameter change resolves the contradiction between productivity and measurement precision.
4Reliability
If longer sensing durations are used in error handling, then voltage threshold downshift increases, but this does not provide sufficient benefit for reducing bit errors
Solution Approach 1:
The system dynamically adjusts sensing duration to match operational needs. By using shorter sensing durations during normal operations and only extending them during specific error handling procedures, the system minimizes cumulative voltage threshold downshift while still achieving bit error reduction when necessary. This dynamic approach resolves the contradiction by preventing excessive voltage threshold instability while maintaining sufficient bit error reduction capability.
Solution Approach 2:
The patent implements parameter changes by selectively extending sensing duration only during error handling procedures rather than using it continuously. This selective parameter change achieves bit error reduction when needed while minimizing the cumulative effect of voltage threshold downshift. The parameter adaptation resolves the contradiction between voltage threshold stability and bit error reduction effectiveness.
Data Source
AI summary
Methods, systems, and devices for read error handling (REH) operations with shorter sensing time are described. For example, a memory system may use a shorter sensing duration (e.g., relative to nominal read operations outside an REH procedure) for performing read operations in the REH procedure, which may reduce BEC and shorten the read duration to increase read performance. Shorter sensing durations may inherently upshift the voltage threshold distribution of memory cells, increasing their reliability and decreasing an associated bit error count. The shorter sensing durations may be used for any read operation performed in the REH procedure. In some cases, the memory system may enter a REH procedure for a block family (e.g., for a sequential read operation). In such cases, the memory system may read the remaining blocks in the block family using the shorter sensing duration after exiting the REH procedure.