Nonvolatile Memory Read Timing Adjustment
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Solution Overview
Problem
Current nonvolatile memory devices face inefficiencies in read operations, particularly in continuous read modes, where the page buffer initialization time is prolonged, affecting read speed.
Innovation Solution
A nonvolatile memory device with a control logic system that adjusts the word line setup start point in read sequences, allowing for earlier initiation in continuous read modes compared to single read modes, thereby reducing page buffer initialization time and enhancing read speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the page buffer initialization sequence is performed in the conventional manner, then the read operation is completed accurately, but the page buffer initialization time is prolonged, reducing read speed
Solution Approach 1:
The patent applies preliminary action by initiating the word line setup earlier in continuous read mode compared to single read mode. The control logic determines to perform word line setup at an earlier timing point when entering continuous read mode, allowing the page buffer initialization to overlap with other operations and thereby reducing the total initialization time while maintaining read accuracy
Solution Approach 2:
The patent implements dynamics by making the word line setup timing adaptive based on the read mode. In continuous read mode, the word line setup start point is adjusted to an earlier time compared to single read mode. This dynamic adjustment of timing parameters allows the system to optimize performance for different operational scenarios, reducing initialization time in continuous read operations
2Loss of time
If the word line setup start point is adjusted to an earlier time in continuous read mode, then the page buffer initialization time is reduced, but the control logic complexity increases
Solution Approach 1:
The patent applies parameter changes by modifying the word line setup start point timing parameter based on the read mode. The control logic changes this critical timing parameter when transitioning from single read mode to continuous read mode, enabling earlier word line setup and reduced initialization time. This parameter adjustment is the core mechanism that resolves the time complexity issue
Data Source
AI summary
A nonvolatile memory device includes a memory cell array including a plurality of memory cells, an address decoder configured to be connected to the memory cells through a plurality of word lines and to provide select or unselect read voltages to the word lines, and a control logic configured to control the address decoder to perform a plurality of read sequences in a continuous read mode and to adjust a word line setup start point in at least one of the read sequences to be different than a word line setup start point in at least one of the other read sequences, wherein the word line setup start point is a time at which the select or unselect read voltages begin to be provided to the word lines.