Memory Read Voltage Calibration Using Error-Bit Feedback
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Solution Overview
Problem
The read voltage level for rewritable non-volatile memory modules becomes offset over time, leading to high error bit rates and significant energy consumption during optimal read level searches, which degrade data read performance.
Innovation Solution
A method to calibrate the read voltage level by using multiple read commands with different voltage levels to adjust the default read voltage based on error bit information, minimizing performance impact on the memory storage device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If optimal read level search operation is performed to find the optimal voltage position, then reading accuracy is improved, but energy consumption increases significantly
Solution Approach 1:
The patent performs preliminary calibration of the read voltage level during manufacturing or initial setup to establish an accurate baseline voltage position. This preliminary action ensures that the default read voltage level is already optimized, reducing or eliminating the need for subsequent optimal read level search operations during normal operation, thereby improving reading accuracy without increasing energy consumption.
Solution Approach 2:
The patent implements a self-calibration mechanism where the memory device automatically monitors and adjusts its own read voltage level based on detected threshold voltage shifts in memory cells. This self-service approach maintains optimal reading accuracy dynamically without requiring external intervention or energy-intensive search operations, as the system uses its own operational data to make real-time voltage adjustments.
2Measurement precision
If optimal read level search operation is performed frequently to correct threshold voltage offset, then reading accuracy is improved, but data read performance drops significantly
Solution Approach 1:
The patent establishes the optimal read voltage level as a default value during manufacturing or initial calibration, so that normal read operations can proceed using this pre-optimized voltage without requiring repeated search operations. This preliminary setup ensures high reading accuracy while maintaining fast data read performance, as the system only performs voltage adjustments when necessary rather than during every read operation.
Solution Approach 2:
The patent implements a feedback mechanism where the system monitors reading accuracy and threshold voltage shifts, and only triggers read level adjustments when actual deviations are detected. This feedback-based approach maintains high data read performance by avoiding unnecessary adjustments, while still ensuring reading accuracy by performing corrections only when the monitored parameters indicate a need for calibration.
3Productivity
If default read voltage level is used without calibration, then data reading speed is maintained, but error bit rate increases due to threshold voltage offset
Solution Approach 1:
The patent implements a self-calibration mechanism where the memory device automatically detects threshold voltage shifts in its own memory cells and adjusts the read voltage level accordingly. This self-service approach maintains high data reading speed by using the default voltage level for normal operations, while simultaneously improving reliability by automatically correcting voltage offsets when detected, thus reducing error bit rates without sacrificing performance.
Solution Approach 2:
The patent uses feedback from error detection mechanisms to trigger selective calibration of the read voltage level. During normal high-speed read operations, the system monitors for errors caused by threshold voltage offset, and only performs voltage adjustments when error rates exceed thresholds. This feedback-based strategy maintains high data reading speed while improving reliability by calibrating only when necessary.
Data Source
AI summary
A read voltage calibration method, a memory storage device, a memory control circuit unit are provided, including: reading, according to a first read command, a first physical unit based on a first read voltage level to obtain first data, and the first read voltage level is a default read voltage level corresponding to the first physical unit or a first voltage difference exists between the first read voltage level and the default read voltage level; decoding the first data to obtain first error bit information; reading, according to a second read command, the first physical unit based on a second read voltage level to obtain second data, and a second voltage difference exists between the second read voltage level and the default read voltage level; decoding the second data to obtain second error bit information; calibrating the default read voltage level according to the first and second error bit information.


