Nonvolatile Memory Read Voltage Compensation via Temperature
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Solution Overview
Problem
The increasing integration of semiconductor memory in storage devices leads to higher data capacity but also increases the likelihood of errors, necessitating a technology to reduce error rates and improve reliability.
Innovation Solution
A method and device that incorporate a temperature sensor to calculate an average sensing temperature and adjust the elapsed time of data programming, using this information to control read voltage levels and reduce errors in nonvolatile memory devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If semiconductor memory integration is improved to increase data capacity, then storage capacity is improved, but error rate increases
Solution Approach 1:
The patent applies preliminary action by calculating and storing elapsed time information at multiple predetermined time points (first, second, and third time periods) before actual data reading occurs. This allows the system to proactively prepare compensation values for charge loss based on temperature and time, so that when data is read, the compensation is already ready, thereby reducing errors without requiring additional real-time measurement or complex processing during the read operation.
Solution Approach 2:
The patent applies parameter changes by dynamically adjusting the read voltage level based on elapsed time and temperature conditions. The memory controller selects different read voltage levels (first, second, or third voltage levels) corresponding to different time periods and temperature ranges. This parameter adjustment compensates for charge loss in memory cells, thereby reducing error rates while maintaining the high integration capacity of the semiconductor memory.
2Reliability
If temperature sensing and elapsed time calculation are implemented to reduce errors, then data reliability is improved, but device complexity increases
Solution Approach 1:
The patent applies self-service by having the memory controller automatically perform temperature sensing, elapsed time calculation, and read voltage selection without external intervention. The system uses its own internal resources (temperature sensor, timer, and stored reference data) to compensate for charge loss. This self-service approach improves data reliability while avoiding the need for additional external control systems or complex coordination, thereby limiting the increase in device complexity.
3Reliability
If read voltage levels are adjusted based on temperature and elapsed time to reduce errors, then error rate is reduced, but operation complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-calculating and storing compensation values in a lookup table or memory structure before actual read operations occur. The memory controller stores elapsed time information and corresponding read voltage levels for different time periods and temperature ranges. During operation, the controller simply queries this pre-prepared data based on current temperature and elapsed time, avoiding complex real-time calculations and simplifying the read operation process while maintaining low error rates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces error rates and enhances data reliability by accounting for temperature-induced charge loss in memory cells, optimizing read operations and maintaining data integrity.
Implementation Method 1
a temperature sensor configured to measure a temperature of the nonvolatile memory device
Data Source
AI summary
A method of operating a storage device includes a nonvolatile memory device, a controller configured to control the nonvolatile memory device and a temperature sensor configured to measure a temperature of the nonvolatile memory device. The method includes calculating an average sensing temperature of a sensing temperature measured by the temperature sensor for a period of time, and periodically calculating an elapsed time of data after the data is programmed in the nonvolatile memory device based upon the average sensing temperature.