Semiconductor Memory Receiver Circuit Bias Current Control
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Solution Overview
Problem
Integrated semiconductor memory devices experience high dissipation loss due to high bias current, leading to increased temperature and retention problems, particularly in DRAM-based modules, which complicates cost/performance ratios and requires additional cooling measures.
Innovation Solution
The integration of a programmable storage unit with a controllable resistor in the receiver circuit, allowing the resistance to be adjusted based on the storage state, thereby reducing bias current and dissipation loss, depending on the application requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If high bias current is used in receiver circuits, then access time is reduced and receiver sensitivity is improved, but dissipation loss increases and temperature rises
Solution Approach 1:
The patent applies dynamics by making the bias current adjustable rather than fixed. The receiver circuit includes a controllable current source that can dynamically adjust the bias current level based on operating conditions, allowing optimization between access time and dissipation loss for different application scenarios
Solution Approach 2:
The patent changes the parameter of bias current from a fixed high value to a variable parameter. By introducing control circuitry that can modify the bias current magnitude, the system can adapt parameters to achieve optimal performance for specific applications (desktop, notebook, or server) rather than being constrained to high dissipation loss
2Measurement precision
If high bias current is used in receiver circuits, then receiver sensitivity is improved, but temperature increases causing retention problems
Solution Approach 1:
The patent makes the bias current dynamic and adjustable, allowing the system to use high bias current only when high receiver sensitivity is required, and reduce it when temperature control is prioritized. This dynamic adjustment prevents continuous high temperature operation while maintaining sensitivity when needed
Solution Approach 2:
The patent changes the bias current parameter from fixed to variable, enabling temperature-sensitive applications to operate at lower bias current levels that prevent excessive temperature rise, while still allowing high sensitivity operation when temperature conditions permit
3Measurement precision
If fixed high bias current is used, then receiver sensitivity is maximized, but dissipation loss is high and cost/performance ratio deteriorates
Solution Approach 1:
The patent makes the receiver circuit universal by adding adaptability through controllable bias current. The same receiver circuit can be configured for different operating modes (high sensitivity or low power) based on application requirements, making it suitable for desktop, notebook, and server applications rather than being optimized for only one scenario
Solution Approach 2:
The patent introduces dynamic control of bias current, allowing the system to adapt its performance characteristics to match different application needs. This flexibility improves the cost-performance ratio by enabling optimization for specific use cases rather than compromising performance for all applications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution reduces dissipation loss and temperature in semiconductor memory devices, allowing for adjustable bias current to optimize performance based on application needs, such as desktop, notebook, or server applications, thereby improving the cost/performance ratio and reducing the need for cooling mechanisms.
Implementation Method 1
A controllable resistor (3) of the receiver circuit (11) is connected between the third terminal and the second terminal of the receiver circuit. The resistance of the controllable resistor (3) is dependent on the storage state.
Data Source
AI summary
An integrated semiconductor memory device comprises: a receiver circuit for receiving a data signal, a receiver circuit for receiving a command signal, and a receiver circuit for receiving an address signal. A programmable storage unit comprises programmable elements. A current of the receiver circuits is controlled in dependence on a state of the programmable elements of the programmable storage unit. Depending on the application in which the integrated semiconductor memory device is used, the current of the receiver circuits is increased or decreased. By decreasing the current of the receiver circuits a dissipation loss of the integrated semiconductor memory device is reduced.