3D Memory Reflective Structure for Laser Annealing Protection
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in increasing data storage capacity and ensuring high yield and reliability, particularly in three-dimensional memory cell arrangements.
Innovation Solution
A semiconductor device design incorporating a reflective structure with alternating layers of different refractive indices, which blocks laser light during annealing processes to prevent damage to underlying metal wiring, thereby enhancing yield and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If laser annealing is performed on the source layer to improve crystallinity and electrical properties, then the semiconductor device performance is improved, but the laser light may penetrate and damage the underlying metal wiring
Solution Approach 1:
A reflective structure is introduced as an intermediary layer between the source layer and the metal wiring. This reflective structure selectively reflects laser light during annealing processes, preventing the laser light from penetrating and damaging the metal wiring underneath while allowing the annealing to proceed effectively on the source layer.
Solution Approach 2:
The reflective structure converts the potentially harmful laser light into a beneficial reflected beam that can be reused or dissipated safely. By reflecting the laser light instead of allowing it to damage the metal wiring, the system transforms a harmful effect into a protective mechanism that enhances overall device reliability.
2Reliability
If the reflective structure is added to block laser light, then the metal wiring is protected from damage, but the device complexity increases
Solution Approach 1:
The reflective structure is formed using composite material layers with different optical properties. Specifically, alternating layers of materials with high and low refractive indices are deposited to create a distributed Bragg reflector structure that efficiently reflects laser light while maintaining a relatively simple fabrication process compatible with existing semiconductor manufacturing techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The reflective structure effectively blocks laser light, preventing damage to metal wiring and improving the yield and reliability of semiconductor devices, particularly in three-dimensional memory cell structures.
Implementation Method 1
a reflective structure, which includes one or more first reflective layers, which have a first refractive index, and one or more second reflective layers, which are stacked alternating with the one or more first reflective layers in the first direction and have a second refractive index that is different from the first refractive index
Implementation Method 2
one or more second reflective layers, which are stacked alternating with the one or more first reflective layers in the first direction and have a second refractive index that is different from the first refractive index
Data Source
AI summary
A semiconductor device includes a first area and a second area around the first area, and comprises a source layer, a stack structure including a plurality of gate electrodes sequentially stacked and spaced apart from one another in a first direction, on the source layer, an interlayer insulating film covering the stack structure, a channel structure extending in the first direction extending into the stack structure in the first area and connected to the source layer in the first area, and a reflective structure overlapping in the first direction with the interlayer insulating film in the second area.