Semiconductor Memory Refresh Control Circuit Temperature Adaptation
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Solution Overview
Problem
Semiconductor memory devices face challenges in maintaining data integrity due to temperature changes, which affect the refresh cycle and write characteristics of memory cells, leading to potential data loss and degradation in performance.
Innovation Solution
A semiconductor memory device with a refresh control circuit that adjusts the target row refresh (TRR) operations based on temperature changes, using a temperature sensor to generate MRS code signals and adjust the refresh cycle, ensuring stable TRR performance even when temperature conditions vary.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the refresh cycle is adjusted in response to temperature changes, then the data integrity is improved, but the device complexity increases due to additional temperature sensing and control circuits
Solution Approach 1:
The refresh control circuit automatically adjusts the refresh cycle based on temperature changes detected by the temperature sensor, enabling the system to self-regulate without external intervention. The circuit monitors temperature and autonomously modifies refresh operations to maintain data integrity across varying thermal conditions.
Solution Approach 2:
The temperature sensor provides continuous feedback to the refresh control circuit about the current thermal state, which then adjusts the refresh cycle accordingly. This closed-loop feedback mechanism ensures the refresh operations remain synchronized with temperature-induced changes in memory cell characteristics.
2Productivity
If cell capacitors are made smaller to increase capacity and speed, then the capacity and speed are improved, but the refresh time increases and write characteristics are reduced
Solution Approach 1:
The refresh cycle is made dynamic rather than fixed, allowing it to adjust based on temperature conditions. When temperature increases cause smaller capacitors to discharge faster, the refresh cycle automatically shortens to compensate, maintaining effective data retention despite the reduced capacitor size and increased refresh requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures stable TRR operations across varying temperatures, maintaining data integrity and reducing the risk of data loss by dynamically adjusting the refresh cycle in response to temperature changes, thus enhancing the overall performance and reliability of semiconductor memory devices.
Implementation Method 1
a temperature sensor configured to sense the temperature change and generate an MRS code signal
Data Source
AI summary
A semiconductor memory device includes a memory circuit including a plurality of memory cells and a refresh control circuit. The refresh control circuit is configured to determine a number of times to perform a target row refresh (TRR) in response to a mode register set (MRS) code signal, wherein the MRS code signal is generated in response to a temperature change, and the refresh control circuit is configured to maintain a refresh cycle of at least two of the memory cells for a period of time when the refresh cycle is changed due to the temperature change.