Post-Package Memory Repair via Nonvolatile Address Programming
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Solution Overview
Problem
Existing memory devices face challenges in repairing defective cells after fabrication, as traditional fuse circuits like laser fuses are difficult to program post-packaging and nonvolatile memory arrays require time to access data, making immediate repair operations inefficient.
Innovation Solution
A method and system for a memory device that allows entering a repair mode, changing data input paths, and programming repair addresses to a nonvolatile memory using setting data, enabling post-package repair of defective memory cells even after the device is mounted.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If laser fuse is used to store repair information, then the repair address can be stored, but it cannot be programmed after wafer mounting and has limited area reduction capability
Solution Approach 1:
The patent changes the storage medium from laser fuse to nonvolatile memory, fundamentally altering the programming capability parameter. This enables post-package programming while maintaining compact size, resolving the contradiction between ease of manufacture and adaptability.
Solution Approach 2:
The patent uses nonvolatile memory to create a programmable copy of the repair address storage function. This copy can be updated after packaging, providing the adaptability needed for post-package repair while maintaining the manufacturing simplicity of the overall system.
2Ease of manufacture
If nonvolatile memory is used to store repair information, then post-package programming is enabled, but data access time increases
Solution Approach 1:
The patent performs preliminary action by programming the nonvolatile memory with repair addresses before the actual repair operation is needed. This pre-programming eliminates the need for time-consuming data access during repair operations, as the repair information is already available in the nonvolatile memory.
Solution Approach 2:
The nonvolatile memory circuit is designed to automatically provide repair information without requiring external data access operations. The circuit self-manages the retrieval and application of repair addresses, minimizing time loss while maintaining post-package programming capability.
3Ease of repair
If repair mode is implemented with path changing, then post-package repair is enabled, but device complexity increases
Solution Approach 1:
The patent implements multi-functionality by designing the control path to serve both normal operation and repair mode functions. The same control circuitry handles both data access and repair address programming, eliminating the need for separate dedicated paths and reducing overall device complexity while enabling post-package repair.
Solution Approach 2:
The patent uses dynamic path switching to transition between normal operation mode and repair mode. This dynamic control allows the system to adapt its operation based on the current state, providing post-package repair capability without requiring permanent complex hardware paths, thus managing device complexity effectively.
Data Source
AI summary
An operation method of a memory device includes entering a repair mode, changing an input path of setting data from a set path to a repair path in response to the entering of the repair mode, receiving the setting data together with a setting command, ending the repair mode after the receiving is repeated a set number of times, changing the input path of the setting data from the repair path to the set path in response to the ending of the repair mode, and programming a repair address for a defective memory cell of the memory device to a nonvolatile memory using the setting data.