Semiconductor Memory Replica Circuit Timing Control

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Solution Overview

Problem

Conventional semiconductor memory technologies face limitations in increasing the number of dummy memory cells connected to dummy bit lines, which restricts the averaging of transistor characteristics and optimization of sense amplifier activation timing.

Innovation Solution

A semiconductor memory design that includes a replica circuit with multiple replica units connected in series, each comprising multiple dummy memory cells in parallel, allowing for increased dummy memory cells to generate sense amplifier enable signals, thereby averaging out transistor inconsistencies and optimizing activation timing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the number of dummy memory cells connected to dummy bit lines is increased, then the timing of activating a sense amplifier is accelerated and transistor characteristic inconsistencies are averaged out, but the device complexity and space requirements increase significantly

Engineering Contradiction:
Improvesense amplifier activation timing consistencyVSAvoidnumber of dummy memory cells
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent divides the dummy memory cell array into multiple groups (first dummy memory cell group, second dummy memory cell group, etc.) connected to different dummy bit lines. Each group is accessed sequentially through multiple clock cycles, allowing the system to achieve the benefits of having many dummy cells without requiring all cells to be accessible simultaneously. This segmentation resolves the contradiction by reducing the immediate complexity while maintaining the averaging effect.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent performs preliminary dummy memory cell accesses in multiple clock cycles before the actual sense amplifier activation. By sequentially accessing dummy cells across different groups in advance, the system pre-establishes the timing conditions needed for optimal sense amplifier activation. This preliminary action allows the system to achieve consistent timing without requiring a single large dummy cell structure.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If the number of dummy memory cells is increased to average out transistor characteristics, then the reading margin is improved, but the access time and operational complexity increase

Engineering Contradiction:
Improvereading marginVSAvoiddummy memory cell access time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent implements periodic dummy memory cell accesses across multiple clock cycles, where different groups of dummy cells are accessed in alternating cycles. This periodic action distributes the access time over multiple cycles rather than requiring a single long access sequence, thereby maintaining reading margin improvement while controlling the time loss through structured, repeatable access patterns.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

By segmenting dummy memory cells into multiple groups that can be accessed in parallel across different time periods, the patent reduces the sequential access time required to access all dummy cells. Each group can be accessed concurrently in different clock cycles, effectively reducing the total time loss while maintaining the statistical averaging benefit for improved reading margin.

Inventive Principle:
Principle #1Segmentation

3Ease of manufacture

If conventional dummy memory cell configurations are used, then the structure is simple, but the effect of averaging out transistor characteristics is limited

Engineering Contradiction:
Improvedummy memory cell structureVSAvoidtransistor characteristic averaging
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent segments the dummy memory cell structure into multiple groups connected to different dummy bit lines, allowing for easier manufacturing of modular units while achieving better transistor characteristic averaging. Each segmented group can be independently designed and manufactured, maintaining ease of manufacture while the collective effect of multiple groups provides superior averaging compared to a single conventional configuration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces an additional temporal dimension to the dummy memory cell access scheme by using multiple clock cycles to access different groups sequentially. This dimensional change from a single-time-access structure to a multi-time-access structure enables better transistor characteristic averaging without significantly increasing spatial complexity, thus maintaining ease of manufacture while improving reliability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS8811104B2Semiconductor memory and system
Publication Date: 2014.08.19 SOCIONEXT INC
  • US8811104B2 patent drawing
  • US8811104B2 patent drawing
  • US8811104B2 patent drawing

AI summary

A semiconductor memory includes a real memory cell; a sense amplifier configured to amplify data read from the real memory cell in response to activation of a sense amplifier enable signal; a replica circuit including a plurality of replica units connected in series, each of replica units including a plurality of dummy memory cells connected in parallel, wherein one of dummy memory cells of one of replica units is accessed in response to data which is read from one of dummy memory cells of one of replica units of a prior stage; and an operation control circuit configured to activate a dummy access signal to access one of dummy memory cells of one of replica units of a first stage in response to a read command, and to activate the sense amplifier enable signal in response to data read from one of replica units of a last stage.