Non-Volatile Memory Resistance Control via Asymmetrical Local Energy States
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Solution Overview
Problem
Conventional resistive random access memory devices face issues such as low resistance producibility, slow response time, limited material selection, and low on/off ratio, necessitating a stable signal generation mechanism for non-volatile memory devices.
Innovation Solution
A non-volatile memory device utilizing a 2-terminal structure with an asymmetrical local energy state (ALES) induced in a semiconductor layer, achieved through instantaneous acceleration and removal of electrons, enabling multi-level resistance variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a filament system using oxygen atom defects is used to adjust resistance levels, then resistance can be adjusted, but resistance producibility is very low and generation of various levels of resistance is impossible
Solution Approach 1:
The patent changes the fundamental operating parameter from oxygen atom defect migration to electron hole pair generation and recombination. By controlling the generation and recombination rates of electron holes in the semiconductor layer, multiple resistance levels can be precisely produced, overcoming the limitation of the filament system that could not generate various resistance levels.
2Manufacturing precision
If a wall motion structure with oxide layer is used to control resistance difference by thickness, then resistance can be controlled, but response time is slow
Solution Approach 1:
The patent replaces the mechanical wall motion structure with an electronic field effect mechanism. Instead of physically moving walls to change oxide layer thickness, the invention uses electric field control to generate and recombine electron holes in the semiconductor layer, achieving resistance control without mechanical movement and thus eliminating the slow response time issue.
3Manufacturing precision
If a wall motion structure with oxide layer is used to control resistance, then resistance difference can be controlled, but on/off ratio of resistor is low
Solution Approach 1:
The patent changes the control mechanism from physical thickness variation to electron hole concentration control. By precisely controlling the generation and recombination parameters of electron holes in the semiconductor layer, the invention achieves a high on/off ratio as the resistance can be switched between highly conductive (when electron holes are present) and highly resistive (when electron holes are recombined) states.
4Ease of manufacture
If conventional resistive memory systems are used, then basic memory function is achieved, but stable signal generation is difficult
Solution Approach 1:
The patent introduces a feedback mechanism through the insulating layer with first and second electrodes that control the generation and recombination of electron holes. This feedback control allows precise regulation of the semiconductor layer's resistance state, ensuring stable signal generation while maintaining the basic memory function of the conventional resistive memory system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device generates a stable signal and achieves multi-level characteristics by varying resistance states using a simple 2-terminal structure, overcoming limitations of conventional resistive memories.
Implementation Method 1
inducing an asymmetrical local energy state (ALES) generated due to instantaneous acceleration of electrons injected into the semiconductor layer
Implementation Method 2
removing the ALES from the semiconductor layer, for recovery of the semiconductor layer
Data Source
AI summary
A non-volatile memory device according to various embodiments of the present invention is characterized in that the non-volatile memory device includes a substrate, a first electrode disposed on the substrate, an insulating layer contacting the first electrode, a semiconductor layer contacting the insulating layer, and a second electrode contacting the semiconductor layer, and is driven using an asymmetrical local energy state (ALES) induced in the semiconductor layer under the condition that at least a portion of the first electrode contacts the semiconductor layer.A method of driving the non-volatile memory device in accordance with various embodiments of the present invention includes inducing an asymmetrical local energy state (ALES) generated due to instantaneous acceleration of electrons injected into the semiconductor layer, and removing the ALES from the semiconductor layer, for recovery of the semiconductor layer.