Non-Volatile Memory Resistor Ladder for Compact ADC References
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Solution Overview
Problem
Conventional resistor ladders in analog-to-digital converters (ADCs) are bulky and power-intensive, lacking design flexibility and process margin improvement, and require complex CMOS comparators.
Innovation Solution
The use of non-volatile memory devices, such as memristor devices, MRAM, phase-change memory, or floating gate devices, in a resistor ladder circuit to produce tunable reference voltages and replace traditional comparators, enabling smaller, more robust ADCs with lower power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional resistor ladders are used in ADCs, then the circuit can perform analog-to-digital conversion, but the circuit becomes bulky and power-intensive
Solution Approach 1:
The patent changes the fundamental parameter of resistance implementation from conventional CMOS resistors to non-volatile memory devices (memristors, MRAM, PCM). This parameter change enables the resistor ladder to achieve the same voltage division function with significantly reduced area and power consumption, as these memory devices offer higher resistance density and non-volatile operation
Solution Approach 2:
The patent extracts the comparator function from the traditional CMOS comparator circuit and implements it using non-volatile memory devices within the resistor ladder structure itself. This extraction eliminates the need for separate, bulky comparator circuits, directly reducing the overall circuit area and power consumption
2Device complexity
If conventional CMOS comparators are used, then the comparison function can be performed, but the device complexity increases
Solution Approach 1:
The patent merges the comparator function with the resistor ladder structure by implementing both functions using non-volatile memory devices. The same devices that form the voltage divider also perform the comparison operation, eliminating the need for separate comparator circuits and reducing overall device complexity
Solution Approach 2:
The non-volatile memory devices in the resistor ladder serve multiple functions: they act as both the resistive elements for voltage division and as the comparison elements. This multi-functionality reduces the total number of components needed and simplifies the overall circuit architecture
3Adaptability or versatility
If conventional resistor ladders are used, then reference voltages can be generated, but design flexibility and process margin improvement are limited
Solution Approach 1:
The patent introduces dynamic programmability to the resistor ladder by using non-volatile memory devices that can have their resistance states programmed and changed. This allows the reference voltages to be dynamically adjusted and tuned after fabrication, providing design flexibility and the ability to compensate for process variations
Solution Approach 2:
The non-volatile memory devices can be pre-programmed with specific resistance values during or after fabrication to compensate for process variations. This preliminary action of programming resistance states enables the circuit to achieve precise reference voltages despite manufacturing tolerances, improving process margin
Data Source
AI summary
The present disclosure provides a voltage divider circuit utilizing non-volatile memory devices. The non-volatile memory device may include, for example, a memristor device, an MRAM (Magnetoresistive random access memory) device, a phase-change memory (PCM) device, a floating gate, a spintronic device, etc. The voltage divider circuit may include one or more first non-volatile memory devices that form a resistor ladder. The resistor ladder may produce a plurality of reference voltages when the resistor ladder is connected between two voltages.