Memory Row Activation Hinting for Latency Reduction
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Solution Overview
Problem
Memory devices face increased latency due to the delay between completing a precharge operation and initiating an activation operation for a subsequent row of memory cells, which hinders efficient access to memory cells.
Innovation Solution
The memory device receives an indication or 'hint' associated with an activation command, allowing it to begin partial activation operations for the next row before receiving the explicit activation command, thereby overlapping with the precharge operation of the current row.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the memory device waits for the precharge operation to complete before initiating the activation operation, then the precharge operation can be properly completed, but the row access latency increases
Solution Approach 1:
The patent applies preliminary action by receiving a hint indicating the location of a subsequent activation command before the precharge operation completes, and using this hint to begin preparatory steps for the next activation operation during the precharge phase. This allows the memory device to start processing the next row activation in advance, reducing the overall latency while ensuring the current precharge operation completes reliably
Solution Approach 2:
The patent implements continuity of useful action by overlapping the precharge operation of the current row with the activation operation of the next row. The hint mechanism enables the memory device to continuously process activation commands without idle waiting periods, maintaining productive operation throughout the precharge phase and eliminating unnecessary gaps in the workflow
2Ease of operation
If the memory device processes activation commands sequentially without overlapping operations, then operation simplicity is maintained, but productivity decreases
Solution Approach 1:
The hint mechanism provides preliminary information about upcoming activation commands, enabling the memory device to prepare for and execute overlapping operations without requiring complex real-time coordination. This maintains operational simplicity while significantly improving productivity by allowing concurrent precharge and activation operations
Data Source
AI summary
Methods, systems, and devices for techniques for indicating row activation are described. A memory device may receive an indication associated with an activation command, which may enable the memory device to begin some aspects of an activation operation before receiving the associated activation command. The indication may include a location of a next row to access as part of the activation command. The indication may be included in a previous activation command or in a precharge command. The memory device may begin activation operations for the next row before the precharge operation of the current row is complete. The memory device may receive the activation command for the next row after receiving the indication, and may complete the activation operations upon receiving the activation command.