Memory System Runtime Failure Detection via Word Line Pre-Charging
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Solution Overview
Problem
The increasing degree of integration in flash memory devices leads to reduced space between word lines, resulting in higher failure rates and runtime failures, which are not effectively managed by existing technologies.
Innovation Solution
A memory system that includes a nonvolatile memory device with a method to pre-charge selected word lines, detect variations in voltage or current, and generate runtime failure information to determine the state of the word line or memory block, using a controller to block access to defective lines and manage runtime failures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the degree of integration is increased to reduce device size and cost, then manufacturing efficiency and device density improve, but the space between word lines decreases leading to increased runtime failures
Solution Approach 1:
The patent applies preliminary action by performing pre-charging of selected word lines before actual memory operations. This preparatory step establishes a known initial voltage state, enabling subsequent detection of voltage variations that indicate runtime failures. The pre-charge operation is executed in advance to create a baseline for failure detection.
Solution Approach 2:
The patent implements feedback by detecting voltage or current variations on word lines after pre-charging and generating runtime failure information based on these variations. The system continuously monitors word line behavior and uses this feedback to identify and manage defective word lines, blocking access to them when failures are detected.
2Quantity of substance
If finer process technology is used to increase integration, then device capacity improves, but manufacturing precision challenges increase leading to more fail-out and runtime failures
Solution Approach 1:
The patent applies self-service by enabling the memory system to automatically detect and manage its own runtime failures without external intervention. The system performs self-diagnosis through voltage/current variation detection on word lines and automatically blocks access to defective word lines, allowing the device to maintain reliability despite manufacturing variations inherent in fine process technology.
3Device complexity
If existing technologies are used without runtime failure detection, then device complexity remains low, but reliability management is insufficient leading to undetected defective word lines
Solution Approach 1:
The patent applies segmentation by dividing the word line management into distinct functional segments: pre-charging circuitry for selected word lines, detection circuitry for measuring voltage or current variations, and control logic for generating runtime failure information and blocking defective word lines. This modular approach enables reliable failure detection while maintaining manageable device complexity.
Data Source
AI summary
An operating method of a memory system which includes a nonvolatile memory device including memory cells connected to a plurality of word lines, the operating method including pre-charging a selected one of the plurality of word lines; detecting a variation in a voltage or a current on the selected word line after the selected word line is floated; generating runtime failure information according to the detected variation; and determining a state of the selected word line or a state of a memory block including the selected word line, based on the runtime failure information.