Memory Segment Isolation via Supply Control Circuits

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Solution Overview

Problem

Memory devices often face defects that are irreparable, leading to the entire device being discarded, as existing methods are insufficient to address all types of defects effectively.

Innovation Solution

A memory device design that includes a memory array and a redundant array, where a programmable unit stores addresses of defective memory segments, and a redundancy controller isolates defective segments from the supply source, replacing them with redundant segments to maintain full storage capacity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing repair methods are used to replace defective memory cells with redundant cells, then certain defects can be repaired, but irreparable defects cause the entire memory device to be discarded

Engineering Contradiction:
Improvememory device functionalityVSAvoiddefect repair capability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The memory array is divided into multiple independently controllable memory segments, each with its own supply control circuit. This segmentation allows defective segments to be isolated and disconnected from the power supply without affecting the functionality of non-defective segments, enabling partial repair of previously irreparable defects.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Supply control circuits act as intermediary components between the power supply and memory segments. These circuits detect defects and mediate by disconnecting power to defective segments while maintaining power to healthy segments, thereby enabling selective repair and preventing total device failure.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If defective memory segments are not isolated, then the memory device continues to operate, but power is wasted on defective segments

Engineering Contradiction:
Improvememory device operationVSAvoidpower consumption
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

The supply control circuit incorporates defect detection feedback mechanisms that monitor the status of memory segments. When a defect is detected, the feedback signal triggers the disconnection of power to the defective segment, eliminating energy waste while maintaining operation of healthy segments.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The defective memory segment is extracted from the active system by disconnecting its power supply through the supply control circuit. This extraction removes the energy-consuming defective component from the operational system while preserving the functionality of remaining healthy segments.

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If redundant segments are used to replace defective segments, then storage capacity is maintained, but device complexity increases

Engineering Contradiction:
Improvestorage capacity maintenanceVSAvoidmemory array structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Redundant memory segments are designed with universal functionality to replace any defective segment in the memory array. The supply control circuits and addressing logic are configured to route operations to appropriate segments dynamically, allowing a single redundant segment to serve multiple replacement purposes without proportionally increasing overall system complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS7836362B2Circuits and methods for repairing defects in memory devices
Publication Date: 2010.11.16 MICRON TECHNOLOGY INC
  • US7836362B2 patent drawing
  • US7836362B2 patent drawing
  • US7836362B2 patent drawing

AI summary

Some embodiments of the invention include a memory device has a number of memory segments connected to a supply source through a supply control circuit. The supply control circuit isolates a selected memory segment from the supply source when the selected memory segment is defective. The memory device replaces a defective memory segment with a redundant segment. Other embodiments are described and claimed.