Semiconductor Memory Device Segmented Connection Member
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The stability of operation in stacked-type semiconductor memory devices is compromised due to weak electrical coupling between electrode layers and channels, leading to decreased on-current and increased leakage currents, which affects the breakdown voltage and overall device performance.
Innovation Solution
A semiconductor memory device design featuring a connection member with a first and second portion, where the second portion has a smaller width than the first, and a charge storage film on its side surface, enhancing electrical coupling and reducing leakage currents by optimizing the distance between electrode layers and channels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a stacked body with alternating insulating and electrode layers is provided with a channel piercing through it, then memory cells can be formed at crossing portions, but weak electrical coupling between electrode layers and channels occurs
Solution Approach 1:
The connection member is divided into a first portion and a second portion with different widths. The first portion has a larger width for electrical connection, while the second portion has a smaller width for forming the charge storage film, creating segmented functional regions that resolve the contradiction between electrical coupling and charge storage
Solution Approach 2:
Different portions of the connection member are given different local properties: the first portion provides strong electrical coupling through larger cross-section, while the second portion provides charge storage capability through the charge storage film on its side surface, allowing each region to optimize for its specific function
2Power
If the distance between electrode layers and channels is reduced to enhance electrical coupling, then on-current increases, but leakage currents also increase
Solution Approach 1:
The connection member acts as an intermediary structure between the electrode layers and the channel. By positioning the charge storage film on the side surface of the connection member's second portion, it mediates the electrical interaction while maintaining appropriate spacing, thus enhancing on-current without proportionally increasing leakage current
Solution Approach 2:
The charge storage film is positioned on the side surface of the connection member rather than directly on top, utilizing the lateral dimension for charge storage. This dimensional shift allows electrical coupling to occur through the vertical connection while charge storage occurs laterally, reducing direct leakage paths
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a stacked body, a semiconductor member, a semiconductor portion, a first insulating film, and a charge storage film. The semiconductor member includes a first portion and a second portion, the first portion contacting with the semiconductor substrate, the second portion being provided on the first portion, contacting with the first portion, and having a second width smaller than a first width of the first portion in a first direction crossing a stacking direction. The first insulating film is provided on a side surface of the second portion. The charge storage film is provided on a side surface of the semiconductor portion, extends in the stacking direction, and includes a first portion located on an upper surface of the second portion of the semiconductor member.