3D Memory Sense Amplifier Layout With Dummy Active Regions
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Solution Overview
Problem
In three-dimensional memory devices, variations in the width and spacing of sense amplifier transistors due to different metal track densities lead to performance degradation and increased chip area, resulting in higher costs due to unnecessary increases in transistor width and spacing to accommodate higher density metal track areas.
Innovation Solution
The introduction of dummy active regions with identical width and spacing to active transistors, allowing for uniform transistor layout across the sense amplifier circuit, thereby maintaining minimal width and spacing without increasing the overall chip area, even in higher density metal track areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If transistor width and spacing are increased to accommodate higher density metal track areas, then metal track density is improved, but chip area increases unnecessarily
Solution Approach 1:
The sense amplifier circuit is divided into two separate arrays: first sense amplifier arrays with transistors connected to first bit lines, and second sense amplifier arrays with transistors connected to second bit lines. This segmentation allows independent optimization of each array's metal track density without forcing uniform transistor dimensions across the entire circuit, thereby maintaining minimal transistor width and spacing while accommodating higher density metal tracks in specific regions.
Solution Approach 2:
Different transistor width and spacing parameters are applied to different regions of the sense amplifier circuit. The first sense amplifier arrays use one set of dimensions optimized for their metal track density, while the second sense amplifier arrays use different dimensions optimized for their respective metal track density requirements. This local quality approach eliminates the need to uniformly increase transistor dimensions across the entire chip, thus preventing unnecessary chip area expansion.
2Quantity of substance
If transistor width and spacing are increased to accommodate higher density metal track areas, then metal track density is improved, but manufacturing cost increases
Solution Approach 1:
By segmenting the sense amplifier circuit into first and second arrays with different optimization parameters, each array can use minimal transistor width and spacing appropriate to its specific metal track density requirements. This prevents the need to uniformly increase transistor dimensions across the entire chip, thereby reducing unnecessary manufacturing costs associated with larger transistor geometries.
Solution Approach 2:
The invention changes the parameters of transistor width and spacing based on the specific requirements of different metal track density regions. Rather than using a single set of parameters for all transistors, the first sense amplifier arrays use parameters optimized for their density, while the second arrays use different parameters, allowing cost-effective manufacturing by avoiding unnecessary parameter increases across the entire chip.
3Quantity of substance
If transistor width and spacing are increased to accommodate higher density metal track areas, then metal track density is improved, but device performance degrades
Solution Approach 1:
Segmenting the sense amplifier circuit into first and second arrays allows each array to be independently optimized for its specific metal track density without compromising transistor performance. By preventing unnecessary increases in transistor width and spacing, the invention maintains optimal device performance characteristics in each region while still accommodating the required metal track density.
Solution Approach 2:
The invention applies local quality optimization where each sense amplifier array uses transistor dimensions specifically suited to its metal track density requirements. This prevents the degradation of device performance that would result from uniformly increasing transistor dimensions across the entire circuit, as each region maintains the minimal necessary dimensions for optimal performance.
Data Source
AI summary
A semiconductor structure includes a memory array including first and second bit lines and a sense amplifier circuit. The sense amplifier circuit includes a first sense amplifier array containing first active sense amplifier transistors that each have an active region having a first width, where the first active sense amplifier transistors are electrically connected to the first bit lines, and a second sense amplifier array including second active sense amplifier transistors that each have the active region having the first width, where the second active sense amplifier transistors are electrically connected to the second bit lines, and dummy active regions which are electrically inactive located between columns of the second active sense amplifier transistors.