Memory Device Program Verify Sensing Time Modulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Memory devices with defective decks experience increased bit error rates due to threshold voltage shifts during read operations, which existing technologies fail to mitigate effectively without complicating read operations.
Innovation Solution
The solution involves elongating the sensing time period during the program verify phase in memory devices with both defective and functional decks, allowing for more program pulses and higher voltage programming to counteract voltage shifts, thereby maintaining data integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the sensing time period is extended during program verify phase, then programming voltage can be increased to counteract threshold voltage shifts, but read operation time increases
Solution Approach 1:
The sensing time period is dynamically adjusted based on the presence of defective decks. During program verify operations on blocks containing defective decks, the sensing time period is extended to allow additional program pulses and higher voltage programming to counteract the threshold voltage shifts caused by the defective decks. For blocks without defective decks, the standard sensing time period is used, maintaining normal read operation speed.
Solution Approach 2:
The patent changes the sensing time period parameter conditionally based on the configuration of defective decks in the memory device. By modifying this temporal parameter, the system compensates for threshold voltage shifts without requiring hardware modifications or complex additional circuits.
2Reliability
If additional compensation mechanisms are added to handle defective decks, then error rates decrease, but device complexity increases
Solution Approach 1:
The memory device uses its existing sensing circuitry and program verify mechanism to compensate for defective decks. The system leverages the natural threshold voltage shift phenomenon and uses extended sensing time during program verify to automatically adjust programming strength, eliminating the need for separate compensation circuits or additional hardware components.
Solution Approach 2:
The extended sensing time period serves multiple functions: it allows for additional program pulses to be applied, enables higher voltage programming, and compensates for threshold voltage shifts all within the existing program verify phase infrastructure, without requiring dedicated compensation circuits.
Data Source
AI summary
A request to perform a program operation to program a set of memory cells on a memory device comprising a sense amplifier circuit is received. A defect indicator associated with the set of memory cells is determined to satisfy a defect condition. A modified sensing time period, exceeding a default sensing time period, is determined based on the defect indicator. The program operation is performed using the modified sensing time period during a program verify phase of the program operation.