Memory Sensing Circuitry XOR Logic Without I/O Transfer
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Solution Overview
Problem
Performing exclusive OR (XOR) operations on data stored in memory cells typically requires transferring data out of the memory array, which increases time and power consumption due to the need for input/output operations.
Innovation Solution
The use of sensing circuitry within the memory array to perform XOR operations without transferring data via input/output lines, allowing logical operations such as NAND, OR, AND, and invert operations to be executed locally, thereby reducing system power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If data is transferred out of the memory array via input/output lines to perform XOR operations, then the operation can be executed using functional unit circuitry, but power consumption and operational time increase
Solution Approach 1:
The patent merges the memory array and sensing circuitry to perform XOR operations directly within the memory array. The sensing circuitry is configured to read data from memory cells and perform logical operations (NAND, OR, AND, invert) to compute XOR results without transferring data outside the array, thereby combining storage and computation functions in one location.
Solution Approach 2:
The sensing circuitry acts as an intermediary between the memory cells and the external functional unit circuitry. Instead of transferring data to external circuitry for processing, the sensing circuitry performs the XOR operation locally by reading data from memory cells, performing logical operations, and writing results back to memory cells, thus eliminating the need for external data transfer.
2Ease of operation
If data is transferred out of the memory array via input/output lines to perform XOR operations, then the operation can be executed using functional unit circuitry, but operational time increases
Solution Approach 1:
The patent merges the memory array and sensing circuitry to perform XOR operations directly within the memory array. The sensing circuitry is configured to read data from memory cells and perform logical operations (NAND, OR, AND, invert) to compute XOR results without transferring data outside the array, thereby combining storage and computation functions in one location.
Solution Approach 2:
The sensing circuitry acts as an intermediary between the memory cells and the external functional unit circuitry. Instead of transferring data to external circuitry for processing, the sensing circuitry performs the XOR operation locally by reading data from memory cells, performing logical operations, and writing results back to memory cells, thus eliminating the need for external data transfer.
3Use of energy by moving object
If sensing circuitry within the memory array is used to perform XOR operations locally, then power consumption is reduced, but the device complexity increases
Solution Approach 1:
The sensing circuitry is designed with multi-functionality, serving both as a data reading device and as a computation unit. The same sensing circuitry that reads data from memory cells is configured to perform logical operations (NAND, OR, AND, invert) and compute XOR results, eliminating the need for separate dedicated computation circuitry.
Solution Approach 2:
The memory array and sensing circuitry are self-sufficient in performing XOR operations. The sensing circuitry reads data from memory cells, performs the necessary logical operations, and writes results back to memory cells without requiring external functional unit circuitry, thus serving itself and eliminating the need for additional external components.
Data Source
AI summary
The present disclosure includes apparatuses and methods related to determining an XOR value in memory. An example method can include performing a NAND operation on a data value stored in a first memory cell and a data value stored in a second memory cell. The method can include performing an OR operation on the data values stored in the first and second memory cells. The method can include performing an AND operation on the result of the NAND operation and a result of the OR operation without transferring data from the memory array via an input/output (I/O) line.


