Support Pillars in Vertical Memory Slots to Prevent Stack Collapse

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Vertical memory arrays in non-volatile memory devices face issues of stack collapse during processing due to increased height, leading to reduced reliability and potential for undesirable tier deformations and current leakage.

Innovation Solution

Incorporation of support pillars within slot regions between pillar array blocks, combined with a barrier material, provides structural support to the stack during conductive structure formation, preventing tier collapse and reducing current leakage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the height of stacks is increased to provide additional memory density, then memory density is improved, but the stacks become prone to toppling or collapse during processing

Engineering Contradiction:
Improvememory densityVSAvoidstack stability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The invention divides the slot region into multiple segments by forming barrier material portions at different vertical levels within the slot. These barrier material segments create discrete support pillar openings at different heights, allowing support pillars to be positioned at multiple levels along the stack. This segmentation provides distributed structural support throughout the stack height, preventing collapse while maintaining high memory density.

Inventive Principle:
Principle #1Segmentation

2Reliability

If replacement gate processing is conducted to form conductive structures, then electrical connections are improved, but tier collapse may occur during or after removal of portions of tiers

Engineering Contradiction:
Improveelectrical connectionVSAvoidtier structural integrity
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The invention performs preliminary action by forming barrier material portions within the slot region before conducting replacement gate processing. These pre-formed barrier material structures provide structural support to the tiers during the subsequent removal and replacement operations. The support pillars are positioned in advance to prevent tier collapse during or after the removal of tier portions, ensuring both electrical connection quality and structural integrity.

Inventive Principle:
Principle #10Preliminary action

3Strength

If support pillars are added to prevent stack collapse, then structural integrity is improved, but device complexity increases

Engineering Contradiction:
Improvestructural integrityVSAvoidfabrication process complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The invention applies multi-functionality by using barrier material that serves dual purposes: (1) as a structural support element to prevent stack collapse, and (2) as a defining structure for creating support pillar openings. The same barrier material formation process that creates structural support also establishes the precise locations for support pillars. This universal approach provides structural integrity while minimizing additional fabrication steps and device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12394481B2Electronic devices including support pillars in slot regions, and related memory devices, systems, and methods
Publication Date: 2025.08.19 MICRON TECHNOLOGY INC
  • US12394481B2 patent drawing
  • US12394481B2 patent drawing
  • US12394481B2 patent drawing

AI summary

An electronic device comprises a stack comprising tiers of alternating conductive levels and insulative levels overlying a source, slots extending vertically through the stack and dividing the stack into blocks, and support pillars within the slots and extending vertically through the stack. The support pillars exhibit a lateral dimension in a first horizontal direction relatively larger than a lateral dimension of the slots in the first horizontal direction, substantially orthogonal to a second horizontal direction in which the slots extend. Related memory devices, systems, and methods are also described.